It is demonstrated that nanoprobing technique is superior in localizing silicide defect rapidly in metal-oxide-semiconductor field-effect transistor (MOSFET). Cobalt silicide (CoSi₂) as an interfacial material below tungsten contact plug, various types of defects about CoSi₂ often cause leakage current in MOSFET, so close studies of problematic silicide is significant regarding MOSFET reliability enhancement. When one MOSFET in a combinational logic circuit is suspected of anomaly, because this kind of circuit is composed of several devices which are sometimes arranged in an active area (AA) of unique geometric shape, it is impossible to collect MOSFET characteristic correctly based on regular nanoprobing flow since conventional method hits limit for combined circuits measurement. Such circumstance almost impedes failure analysis (FA) in device level. Nevertheless, relying on our alternative strategy of multi-probe configuration, a novel nanoprobing analysis flow is adopted for device examination. It is shown that exact I-V characteristic of failed device can be captured by proposed workflow. Following I-V curve analysis further reveals an evident electrical signature of abnormal abrupt junction. It corresponds to an active area shorting with its surrounding nwell region. In addition, sophisticated leakage current behaviors are exhaustively interpreted by simplified models. Eventually, we confirmed CoSi₂ encroachment from the active area into nwell by the means of transmission electron microscopy (TEM) analysis. This paper presents an effective analysis to identify leaky junction of MOSFET in logic circuit that is rarely reported before. Furthermore, our exploration exhibits impressive flexibility of nanoprobing analysis in terms of localizing unusual silicide defect, so nanoprobe analysis is clearly an attractive option to optimize MOSFET manufacturing.

结果表明，纳米探测技术在快速定位金属氧化物半导体场效应晶体管（MOSFET）中的硅化物缺陷方面具有优势。硅化钴（CoSi _{2 ）作为钨接触塞下面的界面材料，关于CoSi 2}的各类缺陷通常会导致 MOSFET 中的漏电流，因此密切研究有问题的硅化物对于提高 MOSFET 可靠性具有重要意义。当怀疑组合逻辑电路中的一个 MOSFET 出现异常时，由于这种电路是由多个器件组成的，这些器件有时排列在具有独特几何形状的有源区 (AA) 中，因此不可能根据规则正确采集 MOSFET 特性。纳米探测流程，因为传统方法达到了组合电路测量的极限。这种情况几乎阻碍了设备级别的故障分析（FA）。然而，依靠我们的多探针配置替代策略，采用一种新颖的纳米探测分析流程进行设备检查。结果表明，所提出的工作流程可以捕获故障设备的确切 IV 特征。以下 IV 曲线分析进一步揭示了异常突变连接的明显电气特征。它对应于与其周围的nwell区短路的有源区。此外，复杂的漏电流行为可以通过简化模型进行详尽的解释。最终，我们确认了 CoSi₂通过透射电子显微镜 (TEM) 分析从活性区域侵入 nwell。本文提出了一种有效的分析方法来识别以前很少报道的逻辑电路中 MOSFET 的漏结。此外，我们的探索在定位异常硅化物缺陷方面表现出令人印象深刻的纳米探测分析灵活性，因此纳米探针分析显然是优化 MOSFET 制造的一个有吸引力的选择。