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Experimental study of total ionizing dose effect on SiC MOSFETs at temperature from −233 °C to 175 °C
Microelectronics Reliability ( IF 1.6 ) Pub Date : 2022-09-25 , DOI: 10.1016/j.microrel.2022.114744
Qingkui Yu , Shuang Cao , He Lv , Yi Sun , Rigen Mo , Qianyuan Wang , Bo Mei , Hongwei Zhang , Chaoming Liu , Xuefeng Yu

The influence of temperature on the total ionizing dose response of silicon carbide (SiC) metal-oxide-semiconductor filed effect transistors (MOSFETs) was experimentally studied by γ-rays irradiation at temperatures ranging from −233 °C to 175 °C. Electrical parameters were investigated with Current-Voltage (I-V) measurements. Results showed that the threshold voltage shifted toward negative post-irradiation due to the radiation-induced oxide trapped charges. The shift of threshold voltage was a function of irradiation temperature. The shift of threshold voltage increased as temperature decreased. The reason was that there were less annealing for the radiation-induced oxide trapped charges at low temperatures.



中文翻译:

-233 °C 至 175 °C 温度下对 SiC MOSFET 的总电离剂量效应的实验研究

温度对碳化硅 (SiC) 金属氧化物半导体场效应晶体管 (MOSFET) 总电离剂量响应的影响通过在 -233 °C 至 175 °C 温度范围内的 γ 射线辐照进行了实验研究。通过电流-电压 ( I - V ) 测量来研究电气参数。结果表明,由于辐射诱导的氧化物俘获电荷,阈值电压在辐射后向负移动。阈值电压的偏移是辐照温度的函数。阈值电压的偏移随着温度的降低而增加。原因是辐射诱导的氧化物俘获电荷在低温下的退火较少。

更新日期:2022-09-26
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