The influence of temperature on the total ionizing dose response of silicon carbide (SiC) metal-oxide-semiconductor filed effect transistors (MOSFETs) was experimentally studied by γ-rays irradiation at temperatures ranging from −233 °C to 175 °C. Electrical parameters were investigated with Current-Voltage (I-V) measurements. Results showed that the threshold voltage shifted toward negative post-irradiation due to the radiation-induced oxide trapped charges. The shift of threshold voltage was a function of irradiation temperature. The shift of threshold voltage increased as temperature decreased. The reason was that there were less annealing for the radiation-induced oxide trapped charges at low temperatures.

温度对碳化硅 (SiC) 金属氧化物半导体场效应晶体管 (MOSFET) 总电离剂量响应的影响通过在 -233 °C 至 175 °C 温度范围内的 γ 射线辐照进行了实验研究。通过电流-电压 ( I - V ) 测量来研究电气参数。结果表明，由于辐射诱导的氧化物俘获电荷，阈值电压在辐射后向负移动。阈值电压的偏移是辐照温度的函数。阈值电压的偏移随着温度的降低而增加。原因是辐射诱导的氧化物俘获电荷在低温下的退火较少。