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New measurement method to investigated service life of protection networks exposed to ESD
Microelectronics Reliability ( IF 1.6 ) Pub Date : 2022-09-25 , DOI: 10.1016/j.microrel.2022.114661
F. Ruffat , F. Caignet , A. Boyer , F. Escudié , G. Mejecaze , F. Puybaret

This paper presents a new measurement method that enables investigating the degradations of protection networks under cumulative ESD pulses. The setup is based on a transmission line pulse (TLP) combined with time domain reflectometry (TDR) to get access to the complex impedance of the device under test. One of the advantages of the technique is that the frequency behaviour of the DUT is extracted as the same time the device is aged. The method is validated on a stable component and different devices are tested. Results show that after a certain number of pulses, the characteristic of the device have changed significantly. The extracted impedances can then be used into system design flow to investigate the impact of ESD stresses on sustainability of ESD protection network. Observations on the deviations of these input protection networks could also have impact on the electromagnetic immunity networks.



中文翻译:

研究暴露于 ESD 的保护网络使用寿命的新测量方法

本文提出了一种新的测量方法,可以研究累积 ESD 脉冲下保护网络的退化。该设置基于传输线脉冲 (TLP) 与时域反射计 (TDR) 相结合,以获取被测设备的复阻抗。该技术的优点之一是 DUT 的频率行为在设备老化的同时被提取。该方法在稳定的组件上进行了验证,并对不同的设备进行了测试。结果表明,经过一定次数的脉冲后,器件的特性发生了显着变化。然后可以将提取的阻抗用于系统设计流程,以研究 ESD 应力对 ESD 保护网络可持续性的影响。

更新日期:2022-09-26
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