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Application of N parallel-connected SiC MOSFETs to solid-state circuit breakers based on UIS tests
Microelectronics Reliability ( IF 1.6 ) Pub Date : 2022-09-25 , DOI: 10.1016/j.microrel.2022.114737
Zaiqi Lou , Wataru Saito , Shin-ichi Nishizawa

N parallel-connected SiC MOSFETs were investigated to apply to solid-state circuit breakers (SSCB), and it is an extension of a method that was proved valid by experiment of two parallel-connected SiC MOSFETs. The unclamped inductive switching (UIS) test was considered as the emergency interruption of SSCBs in this research. Because of the variations of breakdown voltage among SiC MOSFETs, the current flowing through devices is imbalanced during emergency interruption of SSCBs, which can drive some of the devices into thermal destruction prematurely. There are many compound cases for several SiC MOFETs with a certain maximum breakdown voltage variation. And the worst case, where the breakdown voltage of one device is assumed as the lowest, whereas the other devices have the same breakdown voltage, was extracted from the calculated results of four parallel-connected situation. In the worst case, it was found that the relation of breakdown voltage variations and current capacity is linear. Moreover, the distributions of breakdown voltage were taken as normal distributions. Using the worst case and distributions, a linear relation of breakdown voltage distributions and rated current of an SSCB could be concluded as a function of paralleled-connected numbers (N). Utilizing the function, the necessary breakdown voltage distributions and N of SiC MOSFETs can be evaluated for SSCBs meeting a certain yield ratio and current.



中文翻译:

基于UIS测试的N个并联SiC MOSFET在固态断路器中的应用

研究了 N 个并联 SiC MOSFET 应用于固态断路器 (SSCB),它是一种方法的扩展,通过两个并联 SiC MOSFET 的实验证明是有效的。本研究将非钳位感应开关 (UIS) 测试视为 SSCB 的紧急中断。由于 SiC MOSFET 之间击穿电压的变化,在 SSCB 紧急中断期间流过器件的电流不平衡,这可能会导致部分器件过早地热损坏。几种具有一定最大击穿电压变化的 SiC MOFET 的复合情况很多。最坏的情况是,假设一个器件的击穿电压最低,而其他器件的击穿电压相同,是从四个并联情况的计算结果中提取的。在最坏的情况下,发现击穿电压变化和电流容量的关系是线性的。此外,击穿电压的分布被视为正态分布。使用最坏情况和分布,SSCB 的击穿电压分布和额定电流的线性关系可以推断为并联数 (N) 的函数。利用该函数,可以评估满足特定良率和电流的 SSCB 所需的 SiC MOSFET 击穿电压分布和 N。使用最坏情况和分布,SSCB 的击穿电压分布和额定电流的线性关系可以推断为并联数 (N) 的函数。利用该函数,可以评估满足特定良率和电流的 SSCB 所需的 SiC MOSFET 击穿电压分布和 N。使用最坏情况和分布,SSCB 的击穿电压分布和额定电流的线性关系可以推断为并联数 (N) 的函数。利用该函数,可以评估满足特定良率和电流的 SSCB 所需的 SiC MOSFET 击穿电压分布和 N。

更新日期:2022-09-26
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