TCAD simulation of the generation and transport of ionization tracks produced in semiconductors by ions is very relevant for device reliability, as well for the design of radiation detectors. This paper presents a unified model calibrated and validated for the charge generated along the ionization track of low-energy alpha particles and protons in Si, SiC, Ge, GaAs, and GaN. The new model presents several advantages over the traditional ones, in particular the ease of calibration, the numerical stability, and capability to be extended to other ion types.

中文翻译：

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TCAD 模拟低能 α 粒子和质子在半导体中产生的电荷的统一模型

TCAD 模拟由离子在半导体中产生的电离轨道的产生和传输与器件可靠性以及辐射探测器的设计非常相关。本文提出了一个统一模型，该模型针对 Si、SiC、Ge、GaAs 和 GaN 中低能 α 粒子和质子的电离轨迹产生的电荷进行了校准和验证。与传统模型相比，新模型具有几个优势，特别是易于校准、数值稳定性以及扩展到其他离子类型的能力。