Ultrafast Activation and Tuning of Topological Textures in Ferroelectric Nanostructures,Advanced Electronic Materials

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Ultrafast Activation and Tuning of Topological Textures in Ferroelectric Nanostructures
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2022-09-25 , DOI: 10.1002/aelm.202200808
Sergey Prosandeev ₁ , Sergei Prokhorenko ₁ , Yousra Nahas ₁ , Julie Grollier ₂ , Diyar Talbayev ₃ , Brahim Dkhil ₄ , Laurent Bellaiche ₁

Affiliation

Polar topological textures are recently discovered in ultra-thin ferroelectrics, including stripe, labyrinth, or bubble states. Enabling to shape on-demand, these topologies can provide an original platform for potential applications. Here, using first-principle-based calculations, it is shown that THz electric field pulses are an efficient means for generating a plethora of topological states in ultrathin films made by a prototypical ferroelectric system, depending on the characteristics of these pulses and films. Consequently, these ultrafast electrical pulses in ultra-thin ferroelectrics offer key ingredients for mimicking neuronal and synaptic behaviors, including all-optical devices, and open a new avenue for topological objects to neuromorphic systems.

中文翻译：

铁电纳米结构中拓扑结构的超快激活和调整

最近在超薄铁电体中发现了极性拓扑纹理，包括条纹、迷宫或气泡状态。这些拓扑能够按需塑造，可以为潜在应用提供原始平台。在这里，使用基于第一性原理的计算表明，太赫兹电场脉冲是在由原型铁电系统制成的超薄膜中产生过多拓扑状态的有效手段，具体取决于这些脉冲和薄膜的特性。因此，超薄铁电体中的这些超快电脉冲为模拟神经元和突触行为（包括全光设备）提供了关键要素，并为拓扑对象到神经形态系统开辟了一条新途径。

更新日期：2022-09-25

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