By employing a mixed SnO$_2$+Sn source, we demonstrate suboxide molecular beam epitaxy growth of phase-pure single crystalline metastable SnO(001) thin films at a growth rate of ~1.0nm/min without the need for additional oxygen. These films grow epitaxially across a wide substrate temperature range from 150 to 450{\deg}C. Hence, we present an alternative pathway to overcome the limitations of high Sn or SnO$_2$ cell temperatures and narrow growth windows encountered in previous MBE growth of metastable SnO. In-situ laser reflectometry and line-of-sight quadrupole mass spectrometry were used to investigate the rate of SnO desorption as a function of substrate temperature. While SnO ad-molecules desorption at Ts = 450{\deg}C was growth-rate limiting,the SnO films did not desorb at this temperature after growth in vacuum. The SnO (001) thin films are transparent and unintentionally p-type doped, with hole concentrations and mobilities in the range of 0.9 to 6.0x10$^{18}$cm$^{-3}$ and 2.0 to 5.5 cm$^2$/V.s, respectively. These p-type SnO films obtained at low temperatures are promising for back-end-of-line (BEOL) compatible applications and for integration with n-type oxides in p-n heterojunction and field-effect transistors

中文翻译：

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通过低氧化物分子束外延外延合成无意掺杂的 p 型 SnO (001)

通过使用混合 SnO$_2$+Sn 源，我们展示了相纯单晶亚稳态 SnO(001) 薄膜的低氧化物分子束外延生长，生长速率约为 1.0nm/min，无需额外的氧气。这些薄膜在 150 至 450{\deg}C 的宽衬底温度范围内外延生长。因此，我们提出了一种替代途径来克服高 Sn 或 SnO$_2$ 电池温度的限制以及在以前的亚稳态 SnO 的 MBE 生长中遇到的窄生长窗口。原位激光反射仪和视距四极质谱仪用于研究 SnO 解吸速率随衬底温度的变化。虽然在 Ts = 450{\deg}C 时 SnO 的 ad 分子解吸是生长速率限制的，但 SnO 薄膜在真空中生长后在此温度下没有解吸。SnO (001) 薄膜是透明的且无意 p 型掺杂，空穴浓度和迁移率在 0.9 到 6.0x10$^{18}$cm$^{-3}$ 和 2.0 到 5.5cm$^ 范围内2$/Vs，分别。这些在低温下获得的 p 型 SnO 薄膜有望用于后端 (BEOL) 兼容应用以及与 pn 异质结和场效应晶体管中的 n 型氧化物集成