Sintering kinetics of NiFe₂O₄-based ceramics inert anodes for aluminum electrolysis doped 7 wt% TiN nanoparticles were conducted to investigate densification and grain growth behaviors. The linear shrinkage increased gradually with the increasing sintering temperature between 1000 and 1450°C, whereas the linear shrinkage rate exhibited a broad peak. The maximum linear shrinkage rate was obtained at 1189.4°C, and the highest densification rate was achieved at the relative density of 75.20%. Based on the pressureless sintering kinetics window, the sintering process was divided into the initial stage, the intermediate stage, and the final stage. The grain growth exponent reduced with increased sintering temperature, whereas the grain growth activation energy decreased by increasing sintering temperature and shortening dwelling time. The grain growth was mainly controlled by atomic diffusion. NiFe₂O₄-based ceramics possessed high-temperature semiconductor essential characteristics. The electrical conductivity of NiFe₂O₄-based ceramics first increased and then decreased with increasing sintering temperature, reached their maximum value (960°C) of 33.45 S/cm under 1300°C, mainly attributed to the relatively dense and uniform microstructure. The thermal shock resistance of NiFe₂O₄-based ceramic was improved by a stronger grain boundary bonding strength and lower coefficient of linear thermal expansion.

中文翻译：

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TiN 纳米粒子掺杂 NiFe2O4 基陶瓷惰性阳极的烧结动力学和性能

_{NiFe 2} O ₄的烧结动力学用于铝电解的陶瓷惰性阳极掺杂 7 wt% TiN 纳米粒子，以研究致密化和晶粒生长行为。在1000~1450℃之间，随着烧结温度的升高，线收缩率逐渐增加，而线收缩率呈现出一个宽峰。1189.4℃时线收缩率最大，相对密度75.20%时致密化率最高。基于无压烧结动力学窗口，将烧结过程分为初期、中期和末期。晶粒生长指数随着烧结温度的升高而降低，而晶粒生长活化能随着烧结温度的升高和保压时间的缩短而降低。晶粒生长主要受原子扩散控制。镍铁₂ O ₄基陶瓷具有高温半导体的基本特性。_{NiFe 2} O ₄基陶瓷的电导率随着烧结温度的升高先升高后降低，在1300℃时达到最大值（960℃）33.45 S/cm，这主要归因于相对致密和均匀的微观结构。_{NiFe 2} O ₄基陶瓷的抗热震性能通过更强的晶界结合强度和更低的线性热膨胀系数得到改善。