In this paper, we studied the impact of a defect trapping layer on the degradation kinetics of 1.3 μm quantum dot laser diodes (QD LDs) for silicon photonics (SiPh). The purpose of the analysis is to prove how the inclusion of trapping layers (TLs) for misfit dislocations can improve the performance and reliability of QD LDs. To this aim we stressed two kinds of devices, that only differ from the inclusion of TLs. By submitting the samples to current step-stress, we tested the devices from mild to highly accelerated conditions. Our results demonstrate that a) the addition of TLs shifts the roll-off of the optical characteristics to higher current densities; b) in devices with TLs, excited state (ES) emission is reached at higher current densities, compared to standard devices; c) in terms of reliability, the addition of TLs results in a slower degradation of the threshold current, to a lower concentration of misfit dislocations in the active region; d) degradation is ascribed to the lowering of the injection efficiency, driven by the escape of carriers out of the active region, which causes an increase in the concentration of non-radiative recombination centers.

在本文中，我们研究了缺陷捕获层对用于硅光子学 (SiPh) 的 1.3 μm 量子点激光二极管 (QD LD) 退化动力学的影响。分析的目的是证明包含错配位错的捕获层 (TL) 如何提高 QD LD 的性能和可靠性。为此，我们强调了两种设备，它们仅与包含 TL 不同。通过将样品置于当前的阶跃应力下，我们测试了从温和到高度加速条件下的设备。我们的结果表明：a）添加 TL 将光学特性的滚降转移到更高的电流密度；b) 在具有 TL 的器件中，与标准器件相比，在更高的电流密度下达到激发态 (ES) 发射；c) 在可靠性方面，添加 TL 会导致阈值电流的衰减更慢，从而降低有源区中失配位错的浓度；d) 退化归因于注入效率的降低，由载流子逸出有源区驱动，这导致非辐射复合中心的浓度增加。