In this article, the non-monotonic electron mobility (μ) is modulated by applying an external electric field (F_ext) in pseudomorphic Al_0.3Ga_0.7As/In_0.15Ga_0.85As asymmetric coupled quantum well (ACQW) structure. The structural asymmetry is achieved through dissimilar doping in the side barriers. Application of a specific F_ext (here, F_ext = 6.66 kV/cm) makes the proposed structure potentially symmetric causing resonance of subband states (RSS) between the wells. Near resonance, the drastic change in the distribution of subband wave functions leads to cusp like variation of the scattering rate matrix elements resulting non-monotonic nature of μ. We show that the variation of μ is mostly due to the ionized impurity scattering mediated by intersubband effects. However, there is a sudden drop in mobility due to interface roughness scattering i.e., μ^ir at RSS and subsequently, it reduces the overall magnitude of μ. We show that μ can be enhanced with a sharp drop at the resonance point by increasing the well width, central barrier width, spacer width, or doping region width of the proposed structure. The results obtained can be utilized to improve the performance of negative resistance based low dimensional device structures.

在本文中，通过在假晶Al _0.3 Ga _0.7 As / In _0.15 Ga _0.85 As非对称耦合量子阱 (ACQW) 结构中施加外部电场 ( F _ext ) 来调制非单调电子迁移率 ( μ )。结构不对称是通过侧势垒中的不同掺杂来实现的。特定F _ext的应用（此处为F _ext = 6.66 kV/cm) 使所提出的结构潜在地对称，从而导致井之间的子带状态 (RSS) 共振。在共振附近，子带波函数分布的剧烈变化导致散射率矩阵元素的尖点状变化，导致μ 的非单调性质。我们表明μ的变化主要是由于子带间效应介导的电离杂质散射。然而，由于界面粗糙度散射，即RSS 处的μ ^ir ，迁移率突然下降，随后，它降低了μ的整体幅度。我们证明了μ通过增加所提出结构的阱宽度、中心势垒宽度、间隔物宽度或掺杂区宽度，可以通过在共振点处急剧下降来增强。所得结果可用于改善基于负电阻的低维器件结构的性能。