Artificial synapses, such as ferroelectric field-effect transistors, aspire the brain-like computation in real life and are likely to replace conventional computing methods in the future. Amorphous SiZnSnO (a-SZTO)-based ferroelectric field-effect transistor is fabricated using the organic poly(vinylidene fluoride-trifluoroethylene) P(VDF-TrFE) ferroelectric gate insulating layer. First, the ferroelectric properties of P(VDF-TrFE) are analyzed depending on the crystallization temperature for artificial synaptic transistor applications. The ferroelectricity becomes prominent with the evolution of the β-phase till 140 °C and degrades thereafter. The a-SZTO-based ferroelectric field-effect transistors employing P(VDF-TrFE) show anticlockwise hysteresis, typical for a ferroelectric field-effect transistor. The nonlinearity for the potentiation and depression and the dynamic range is confirmed to be increased with higher β-phase concentration. The rise in the concentration is related to the elevated thermodynamic stability of the β-phase between curie temperature and the melting point. Utilizing the parameters obtained from the a-SZTO-P(VDF-TrFE) synaptic transistor, the simulation studies exhibit a high recognition rate of 86.8%, which makes it a promising candidate for artificial intelligence applications.

中文翻译：

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用于神经形态计算的具有高动态范围的相控人工 SiZnSnO/P(VDF-TrFE) 突触装置

人工突触，如铁电场效应晶体管，在现实生活中渴望类脑计算，并有可能在未来取代传统的计算方法。使用有机聚（偏二氟乙烯-三氟乙烯）P（VDF-TrFE）铁电栅极绝缘层制造基于非晶SiZnSnO（a-SZTO）的铁电场效应晶体管。首先，根据人工突触晶体管应用的结晶温度分析了 P(VDF-TrFE) 的铁电特性。铁电性随着 β 相的演变而变得突出，直到 140 °C，然后退化。采用 P(VDF-TrFE) 的基于 a-SZTO 的铁电场效应晶体管显示出逆时针滞后现象，这是铁电场效应晶体管的典型特征。增强和抑制的非线性以及动态范围被证实随着更高的 β 相浓度而增加。浓度的升高与 β 相在居里温度和熔点之间的热力学稳定性提高有关。利用从 a-SZTO-P(VDF-TrFE) 突触晶体管获得的参数，仿真研究显示出 86.8% 的高识别率，这使其成为人工智能应用的有前途的候选者。