Herein, we have developed the high-performance photodetector diodes (p-Co₃O4/n-Si and p-Mo@Co₃O₄/n-Si) by spray pyrolysis route for modern optoelectronic devices. The impact of different molybdenum (Mo) ions concentrations (0, 2, 4, and 6 wt.%) on the structural, morphological, optical and photo-electrical properties of Co₃O₄ films has been investigated. The X-ray diffraction study confirms the cubic phase of Mo-doped Co₃O₄ thin films with good crystallinity. From FESEM images, the unevenly sized sphere-like grains were clearly observed which are agglomerated at higher doping levels. UV-VIS spectra confirmed that the thin film owns good absorption and the energy gap varied with Mo doping. The p-Co₃O4/n-Si and p-Mo@Co₃O₄/n-Si (Mo = 2, 4, and 6 wt.%) photodiodes were fabricated. The barrier height of the fabricated diodes was varied in the range of 0.65 to 0.98 eV. The maximum sensitivity of 10382% at 1.2 V has been achieved for 6 wt.% of Mo-doped diodes due to the creation of photo-created charge couples. Also, the quantum efficiency of the diode was enhanced from 39 to 164%. The 6 wt.% of p-Mo@Co₃O₄/n-Si junction diode exhibited the highest device performance among others and can be used as high performance photodetector.

在此，我们通过喷雾热解路线开发了用于现代光电器件的高性能光电探测器二极管（p-Co ₃ O4/n-Si 和 p-Mo@Co ₃ O _{4 /n-Si）。}研究了不同钼 (Mo)_{离子浓度（0、2、4 和 6 wt.%）对 Co 3} O ₄薄膜的结构、形态、光学和光电性能的影响。X射线衍射研究证实了Mo掺杂Co ₃ O ₄薄膜的立方相具有良好的结晶度。从 FESEM 图像中，可以清楚地观察到尺寸不均匀的球状晶粒，它们在较高的掺杂水平下聚集。UV-VIS光谱证实薄膜具有良好的吸收性，并且能隙随Mo的掺杂而变化。制造了 p-Co ₃ O4/n-Si 和 p-Mo@Co ₃ O ₄ /n-Si（Mo = 2、4 和 6 wt.%）光电二极管。制造的二极管的势垒高度在 0.65 到 0.98 eV 的范围内变化。由于光生电荷对的产生，6 wt.% 的 Mo 掺杂二极管在 1.2 V 下实现了 10382% 的最大灵敏度。此外，二极管的量子效率从 39% 提高到 164%。6 wt.%的p-Mo@Co ₃ O ₄/n-Si 结二极管在其他器件中表现出最高的器件性能，可用作高性能光电探测器。