In this paper we report on a study of an atmospheric pressure plasma enhanced chemical vapor deposition process based on a simple dielectric barrier discharge using a low frequency (28 kHz) high voltage generator. We have investigated the effect of a range of deposition parameters on the properties of silica-like layers grown from a tetraethoxysilane (TEOS)/He/O₂ system. It is shown that the deposition temperature is a critical parameter in determining the composition, growth rate and characteristics of the deposited films, and the level of electrical power absorbed in plasma determines the concentration of active silicon containing species formed in the discharge generation region. Deposition rates up to 19 nm min⁻¹ can be achieved and layer properties, such as refractive index, porosity and breakdown voltage, are comparable with those obtained by more conventional CVD processes. General optimum conditions for high growth rates of good quality films can be inferred from the results.

在本文中，我们报告了一项基于使用低频 (28 kHz) 高压发生器的简单介质阻挡放电的大气压等离子体增强化学气相沉积工艺的研究。我们研究了一系列沉积参数对从四乙氧基硅烷 (TEOS)/He/O ₂系统中生长的类二氧化硅层性能的影响。结果表明，沉积温度是决定沉积膜的组成、生长速率和特性的关键参数，等离子体中吸收的电功率水平决定了在放电产生区域中形成的活性含硅物质的浓度。沉积速率高达 19 nm min ^-1可以实现，并且层特性，例如折射率、孔隙率和击穿电压，与通过更传统的 CVD 工艺获得的特性相当。从结果中可以推断出高质量薄膜的高生长率的一般最佳条件。