The development of materials with high energy storage plays a crucial role in solving energy consumption. Traditional dielectric ceramics have the disadvantages of low energy storage and low efficiency. The most effective solution is to reduce the dielectric loss and increase the breakdown strength. In this paper, (Na_0.73Bi_0.08Sm_0.01)(Nb_0.91Ta_0.09)O₃ relaxor ferroelectric ceramics were prepared, which achieved a high energy storage density of 1.66 J cm⁻³, high efficiency (83.6%) at 214 kV/cm at room temperature. The addition of Bi₂O₃ makes the A site cations disordered, thereby generating random fields, breaking the long-range order, and forming polar nanodomains. That allows the ceramic to acquire relaxation properties, reducing the dielectric loss. The impedance analysis proves that the breakdown strength is related to the addition of Sm₂O₃. The addition of Sm reduces the oxygen vacancy defect concentration and inhibits the migration of carriers, thereby improving its breakdown strength. Through proper doping of Bi and Sm, the relaxation properties and breakdown field strength of the ceramics are enhanced to obtain excellent energy storage performance. This provides a new idea in terms of relaxation and oxygen vacancy defects for NaNbO₃-based energy storage ceramics.

开发高储能材料对解决能源消耗具有至关重要的作用。传统的介电陶瓷存在储能低、效率低的缺点。最有效的解决办法是降低介电损耗，提高击穿强度。本文制备了(Na _0.73 Bi _0.08 Sm _0.01 )(Nb _0.91 Ta _0.09 )O _{3弛豫铁电陶瓷，实现了1.66 J cm} ^-3的高储能密度，214 kV/下的高效率（83.6%）室温下厘米。添加Bi ₂ O ₃使A位阳离子无序化，从而产生随机场，打破长程有序，形成极性纳米域。这使得陶瓷获得弛豫特性，减少介电损耗。阻抗分析证明击穿强度与Sm ₂ O ₃的添加有关。Sm的加入降低了氧空位缺陷浓度，抑制了载流子的迁移，从而提高了其击穿强度。通过适当掺杂Bi和Sm，增强陶瓷的弛豫特性和击穿场强，获得优异的储能性能。_{这为NaNbO 3}基储能陶瓷在弛豫和氧空位缺陷方面提供了新思路。