Electrostriction is a property of dielectric materials whereby an applied electric field induces a mechanical deformation proportional to the square of that field. The magnitude of the effect is usually minuscule (<10^–19 m² V^–2 for simple oxides). However, symmetry-breaking phenomena at the interfaces can offer an efficient strategy for the design of new properties^1,2. Here we report an engineered electrostrictive effect via the epitaxial deposition of alternating layers of Gd₂O₃-doped CeO₂ and Er₂O₃-stabilized δ-Bi₂O₃ with atomically controlled interfaces on NdGaO₃ substrates. The value of the electrostriction coefficient achieved is 2.38 × 10^–14 m² V^–2, exceeding the best known relaxor ferroelectrics by three orders of magnitude. Our theoretical calculations indicate that this greatly enhanced electrostriction arises from coherent strain imparted by interfacial lattice discontinuity. These artificial heterostructures open a new avenue for the design and manipulation of electrostrictive materials and devices for nano/micro actuation and cutting-edge sensors.

电致伸缩是介电材料的一种特性，施加的电场会引起与该电场的平方成正比的机械变形。影响的幅度通常很小（对于简单的氧化物， <10 ^–19  m ²  V ^{–2 ）。然而，界面处的对称破缺现象可以为设计新特性1,2}提供有效的策略。在这里，我们报告了通过外延沉积 Gd ₂ O ₃掺杂的 CeO ₂和 Er ₂ O ₃稳定的 δ-Bi ₂ O _{3的交替层的工程电致伸缩效应}在 NdGaO ₃衬底上具有原子控制界面。所获得的电致伸缩系数值为 2.38 × 10 ^–14  m ²  V ^–2，比最著名的弛豫铁电体高出三个数量级。我们的理论计算表明，这种大大增强的电致伸缩是由界面晶格不连续性赋予的相干应变引起的。这些人工异质结构为纳米/微米驱动和尖端传感器的电致伸缩材料和器件的设计和操作开辟了一条新途径。