Abstract

We review the design and main parameters of field-effect transistors based on 2D structures of transition metal di- and trichalcogenides MoS₂, MoSe₂, MoTe₂, WS₂, WSe₂, Mo_1 ‒ xW_xSe₂, ZrS₂, ZrSe₂, HfS₂, HfSe₂, PtS₂, PtSe₂, PtTe₂, PdSe₂, ReS₂, ReSe₂, HfS₃, ZrS₃, TiS₃, TaSe₃, and NbS₃, as well as monoatomic phosphorene (2DbP), antimonene (2DSb), arsenene (2DAs), silicene (2DSi), germanene (2DGe), and stanene (2DSn). Field-effect nanotransistors on flexible substrates, tunnel, and single-electron transistors based on van der Waals structures of graphene quantum dots, as well as transistors containing 2D heteropairs Gr‒(h)BN, Gr‒WS₂, Gr‒(h)BC₂N, Gr‒FGr, SnS₂‒WS₂, SnSe₂‒WSe₂, HfS₂‒MoS₂, PdSe₂‒MoS₂, and WSe₂‒WO_3 – x are discussed.

中文翻译：

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基于二维结构的场效应晶体管（评论）

摘要

我们回顾了基于过渡金属二硫化物和三硫化物 MoS ₂、MoSe ₂、MoTe ₂、WS ₂、WSe ₂、Mo _{1 ‒  x} W _x Se ₂、ZrS ₂、 ZrSe ₂ , HfS _{2 , HfSe 2} , PtS ₂ , PtSe ₂ , PtTe ₂ , PdSe ₂ , ReS ₂ , ReSe ₂ , HfS ₃ , ZrS ₃ , TiS ₃ , TaSe ₃, 和 NbS ₃，以及单原子磷烯 (2DbP)、锑烯 (2DSb)、砷烯 (2DAs)、硅烯 (2DSi)、锗烯 (2DGe) 和锡烯 (2DSn)。柔性衬底上的场效应纳米晶体管、隧道和基于石墨烯量子点范德华结构的单电子晶体管，以及含有二维异质对 Gr-(h)BN、Gr-WS ₂、Gr-(h)的晶体管讨论了BC ₂ N、Gr-FGr、SnS ₂ -WS ₂、SnSe ₂ -WSe ₂、 HfS ₂ -MoS ₂、PdSe ₂ -MoS ₂和WSe ₂ -WO _{3 -  x}。