Evolution and Intersection of Extended Defects and Stacking Faults in 3C-SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case,Physica Status Solidi (B) - Basic Solid State Physics

当前位置： X-MOL 学术 › Phys. Status Solidi B › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Evolution and Intersection of Extended Defects and Stacking Faults in 3C-SiC Layers on Si (001) Substrates by Molecular Dynamics Simulations: The Forest Dislocation Case
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2022-09-20 , DOI: 10.1002/pssb.202270027
Luca Barbisan ₁ , Emilio Scalise ₁ , Anna Marzegalli ₂

Affiliation

The crossing of stacking faults (namely dislocation forest) in 3C-SiC has been experimentally probed to cause detrimental effect on the electronic properties of the layer. By means of classical molecular dynamics simulations, Anna Marzegalli and co-workers (in article number 2100584) show for the first time the evolution of two crossing partial dislocation loops, revealing the mechanism that leads to the formation of a complex defect at their intersection.

中文翻译：

通过分子动力学模拟在 Si (001) 衬底上的 3C-SiC 层中扩展缺陷和堆垛层错的演变和交叉：森林位错案例

3C-SiC 中堆垛层错（即位错林）的交叉已被实验探测到对层的电子特性造成不利影响。通过经典的分子动力学模拟，Anna Marzegalli 及其同事（文章编号 2100584）首次展示了两个交叉部分位错环的演变，揭示了导致在它们的交叉处形成复杂缺陷的机制。

更新日期：2022-09-21

点击分享查看原文

点击收藏

公开下载

阅读更多本刊最新论文