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Surface Energy-Mediated Self-Catalyzed CsPbBr3 Nanowires for Phototransistors
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2022-09-20 , DOI: 10.1002/aelm.202200727 Dengji Li 1 , You Meng 1 , Yini Zheng 1 , Pengshan Xie 1 , Xiaolin Kang 1 , Zhengxun Lai 1 , Xiuming Bu 1 , Wei Wang 1 , Weijun Wang 1 , Furong Chen 1 , Chuntai Liu 2 , Changyong Lan 3 , SenPo Yip 4 , Johnny C. Ho 4, 5
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2022-09-20 , DOI: 10.1002/aelm.202200727 Dengji Li 1 , You Meng 1 , Yini Zheng 1 , Pengshan Xie 1 , Xiaolin Kang 1 , Zhengxun Lai 1 , Xiuming Bu 1 , Wei Wang 1 , Weijun Wang 1 , Furong Chen 1 , Chuntai Liu 2 , Changyong Lan 3 , SenPo Yip 4 , Johnny C. Ho 4, 5
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Controllable self-catalyzed growth of semiconductor nanowires (NWs) is of great importance, particularly to avoid impurities coming from foreign catalysts to deteriorate the NW properties. Although this catalyst-free NW growth has many obvious advantages, there are very limited works focused on all-inorganic CsPbBr3 perovskite NWs, which is one of the recent champion materials for electronics and optoelectronics. Here, a direct self-catalyzed synthesis of freestanding CsPbBr3 NWs via vapor–liquid–solid growth mechanism by chemical vapor deposition is developed. Notably, mainipulation of the substrate surface roughness is the key enabling parameter for the self-catalyzed NW growth here. It is revealed that the surface energy of substrates, modulated by its surface roughness, is found to effectively mediate the self-catalytic growth of CsPbBr3 NWs. When configured into photodetectors, the intrinsic p-type CsPbBr3 NWs exhibit good optoelectronic performance with a photoresponivity of ≈2000 A W−1, a detectivity of ≈2.57 × 1012 Jones, and a fast response down to 362 µs. All these results evidently indicate the technological potential of this self-catalyzed synthesizing route for other high-quality all-inorganic perovskite NWs.
中文翻译：
用于光电晶体管的表面能介导的自催化 CsPbBr3 纳米线
半导体纳米线 (NW) 的可控自催化生长非常重要，特别是要避免来自外来催化剂的杂质破坏 NW 特性。尽管这种无催化剂 NW 生长具有许多明显的优势，但专注于全无机 CsPbBr 3钙钛矿 NW 的工作非常有限，这是最近电子和光电子领域的冠军材料之一。这里，直接自催化合成独立的 CsPbBr 3开发了通过化学气相沉积的气-液-固生长机制的 NW。值得注意的是，基板表面粗糙度的主要控制是此处自催化 NW 生长的关键启用参数。结果表明，受表面粗糙度调节的基底表面能可有效调节 CsPbBr 3 NW 的自催化生长。当配置成光电探测器时，本征 p 型 CsPbBr 3 NW 表现出良好的光电性能，光响应性≈2000 AW -1，探测率≈2.57 × 10 12Jones，以及低至 362 µs 的快速响应。所有这些结果都清楚地表明了这种自催化合成路线对其他高质量全无机钙钛矿纳米线的技术潜力。
更新日期：2022-09-20
中文翻译：
用于光电晶体管的表面能介导的自催化 CsPbBr3 纳米线
半导体纳米线 (NW) 的可控自催化生长非常重要，特别是要避免来自外来催化剂的杂质破坏 NW 特性。尽管这种无催化剂 NW 生长具有许多明显的优势，但专注于全无机 CsPbBr 3钙钛矿 NW 的工作非常有限，这是最近电子和光电子领域的冠军材料之一。这里，直接自催化合成独立的 CsPbBr 3开发了通过化学气相沉积的气-液-固生长机制的 NW。值得注意的是，基板表面粗糙度的主要控制是此处自催化 NW 生长的关键启用参数。结果表明，受表面粗糙度调节的基底表面能可有效调节 CsPbBr 3 NW 的自催化生长。当配置成光电探测器时，本征 p 型 CsPbBr 3 NW 表现出良好的光电性能，光响应性≈2000 AW -1，探测率≈2.57 × 10 12Jones，以及低至 362 µs 的快速响应。所有这些结果都清楚地表明了这种自催化合成路线对其他高质量全无机钙钛矿纳米线的技术潜力。
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