Abstract

In recent years, there has been a rapid improvement in photonics products due to the use of multilayer heterostructures grown on the basis of advanced materials; designing the structure of a photosensitive element (PSE) to achieve the minimum dark current, which in turn leads to a change in generations of matrix photodetector modules (PDMs). Several different types of PDMs based on InSb epitaxial structures for the range of 3–5 μm, based on GaAs/AlGaAs QWIP-structures for the range 7.8–9.0 μm, and based on InGaAs XBn-structures for the range 0.9–1.7 μm were developed and investigated. The foreign analogs are shown, and the advantages given by the new capabilities offered by new detector technologies are considered.

中文翻译：

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现代光电探测器红外模块

摘要

近年来，由于采用了在先进材料基础上生长的多层异质结构，光子学产品有了飞速的进步；设计光敏元件 (PSE) 的结构以实现最小暗电流，这反过来又导致矩阵光电探测器模块 (PDM) 的世代发生变化。几种不同类型的 PDM，基于 InSb 外延结构，范围为 3–5 μm，基于 GaAs/AlGaAs QWIP 结构，范围为 7.8–9.0 μm，基于 InGaAs X B n结构，范围为 0.9–1.7 μm 被开发和研究。展示了国外的类似物，并考虑了新检测器技术提供的新功能所带来的优势。