Tantalum oxide (Ta₂O₅) is widely used in electronics, with important applications in backend capacitors and memristors. However, major technological challenges have to be faced and solved. Also, concerns related to the reliability of these new stacks have to be taken into consideration. We report the reliability of Ta₂O₅ films focusing on the dynamics of the charge trapping and their leakage behavior under a constant voltage stress. We leverage the use of Nb:SrTiO₃ back electrodes as a clean, well-defined surface, allowing the study of the Ta₂O₅ layer with no significant interface effects. The main features of the breakdown Ta₂O₅/Nb:SrTiO₃ stacks are presented and analyzed in terms of an electromigration-based model. Our results outline the performance limits of Ta₂O₅ films, providing guidelines for development and integration of current and future devices.

氧化钽（Ta ₂ O ₅）广泛用于电子产品，在后端电容器和忆阻器中具有重要应用。然而，必须面对和解决重大的技术挑战。此外，还必须考虑与这些新堆栈的可靠性有关的问题。我们报告了 Ta ₂ O ₅薄膜的可靠性，重点关注电荷俘获的动力学及其在恒定电压应力下的泄漏行为。我们利用 Nb:SrTiO ₃背电极作为干净、定义明确的表面，允许研究没有明显界面效应的 Ta ₂ O ₅层。击穿Ta ₂ O的主要特征₅ /Nb:SrTiO ₃堆栈根据基于电迁移的模型进行了介绍和分析。我们的结果概述了 Ta ₂ O ₅薄膜的性能限制，为当前和未来设备的开发和集成提供了指导。