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Enhancing two-dimensional perovskite photodetector performance through balancing carrier density and directional transport
Journal of Materials Chemistry A ( IF 10.7 ) Pub Date : 2022-09-20 , DOI: 10.1039/d2ta04288f
Tao Huang 1, 2 , Zhicheng Zhu 3 , Chen Zhao 1, 2 , Wenchi Kong 1, 2 , Xuhang Chen 1, 2 , Ruiyan Li 1, 2 , Zhi Yu 1, 2 , Zhiming Shi 2, 4 , Dabing Li 2, 4 , Bai Yang 3 , Weili Yu 1, 2
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Recently, two-dimensional (2D) Ruddlesden–Popper perovskites have attracted extensive attention in the research society owing to their unique organic and inorganic layered structure induced superb stability. However, the quantum confinement effect and dielectric confinement effect caused by the layered structure of 2D perovskites limit the carrier transport and further hinder performance improvement of 2D perovskite optoelectronic devices. To resolve this problem, we have adjusted carrier density and carrier lateral transport in 2D perovskites by a layer optimization strategy. A series of 2D perovskite PEA2MA(n−1)PbnI3n+1 single crystals with varying layers (n = 1–5) have been synthesized by an in situ reverse temperature crystallization procedure, and ultra-high efficiency lateral structured photodetectors have been achieved. When n is 4, the photodetector shows the highest responsivity of 3077 A W−1 which is over 20 times higher than previous reports. A record external quantum efficiency of 7.2 × 106% is also achieved. The density functional theory calculations also confirm that directional migration of perovskite carriers is optimal when the layer number of the 2D perovskite PEA2MA(n−1)PbnI3n+1 is 4. This research shows that the layer number n is a key parameter in tuning the carrier density and lateral transport properties of the 2D PEA2MA(n−1)PbnI3n+1 perovskite, and a balance between these two parameters can be achieved when n is 4. This work is instructive for the fabrication of high-performance 2D perovskite optoelectronic devices.

中文翻译:

通过平衡载流子密度和定向传输来提高二维钙钛矿光电探测器的性能

最近,二维(2D)Ruddlesden-Popper钙钛矿由于其独特的有机和无机层状结构引起了极高的稳定性,在研究界引起了广泛的关注。然而,二维钙钛矿的层状结构引起的量子限制效应和介电限制效应限制了载流子传输,进一步阻碍了二维钙钛矿光电器件的性能提升。为了解决这个问题,我们通过层优化策略调整了二维钙钛矿中的载流子密度和载流子横向传输。一系列二维钙钛矿 PEA 2 MA ( n -1) Pb n I 3 n +1具有不同层数 ( n= 1-5)已通过原位反向温度结晶程序合成,并实现了超高效横向结构光电探测器。当n为 4 时,光电探测器显示出 3077 AW -1的最高响应度,比之前的报道高出 20 倍以上。还实现了创纪录的 7.2 × 10 6 % 的外部量子效率。密度泛函理论计算还证实,当二维钙钛矿 PEA 2 MA ( n -1) Pb n I 3 n +1的层数时,钙钛矿载流子的定向迁移是最佳的为 4。本研究表明,层数n是调整 2D PEA 2 MA ( n -1) Pb n I 3 n +1钙钛矿的载流子密度和横向传输特性的关键参数,以及这两者之间的平衡当n为 4时可以实现参数。这项工作对于制造高性能二维钙钛矿光电器件具有指导意义。
更新日期:2022-09-20
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