This paper proposes a dynamic current hysteresis model for the Indium Gallium Zinc Oxide Thin Film Transistor (IGZO-TFT). Based on the Shockley-Read-Hall (SRH) theory, a kinetic equation that accurately describes the interface trap’s capture/emission behaviour is presented, which can incorporate the effect of interface trap density, trap energy level and scan rate dependency. Further, the kinetic equation is solved using a sub-circuit approach, combined with a calibrated TFT static current model, to achieve an accurate simulation of the current hysteresis of IGZO-TFT. This model has been validated with numerical TCAD simulations and has been shown to precisely reflect the effect of trap energy level, trap density and scan rate on the current hysteresis characteristics.

本文提出了铟镓锌氧化物薄膜晶体管 (IGZO-TFT) 的动态电流滞后模型。基于 Shockley-Read-Hall (SRH) 理论，提出了一个准确描述界面陷阱捕获/发射行为的动力学方程，该方程可以结合界面陷阱密度、陷阱能级和扫描速率依赖性的影响。此外，使用子电路方法求解动力学方程，并结合校准的 TFT 静态电流模型，以实现对 IGZO-TFT 电流滞后的精确模拟。该模型已通过数值 TCAD 模拟得到验证，并已被证明可以精确反映陷阱能级、陷阱密度和扫描速率对电流滞后特性的影响。