Computational Associative Memory with Amorphous Metal-Oxide Channel 3D NAND-Compatible Floating-Gate Transistors,Advanced Electronic Materials

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Computational Associative Memory with Amorphous Metal-Oxide Channel 3D NAND-Compatible Floating-Gate Transistors
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2022-09-18 , DOI: 10.1002/aelm.202200643
Chen Sun ₁ , Chao Li ₂ , Subhranu Samanta ₁ , Kaizhen Han ₁ , Zijie Zheng ₁ , Jishen Zhang ₁ , Qiwen Kong ₁ , Haiwen Xu ₁ , Zuopu Zhou ₁ , Yue Chen ₁ , Cheng Zhuo ₂ , Kai Ni ₃ , Xunzhao Yin ₂ , Xiao Gong ₁

Affiliation

3D NAND has been enabling continuous NAND density and cost scaling beyond conventional 2D NAND since sub-20-nm nodes. However, its poly-Si channel suffers from low mobility, instability caused by grain boundaries, and large device-to-device variations in electrical characteristics at highly scaled device dimensions. These drawbacks can be overcome by introducing an amorphous indium-gallium-zinc-oxide (a-IGZO) channel, which has the advantages of ultralow OFF current, back-end-of-line compatibility, higher mobility than poly-Si, and free of grain boundaries due to the amorphous nature. In this work, ultrascaled floating-gate (FG) transistors with a channel length down to 60 nm are reported, achieving the highest ON current of 127 µA µm⁻¹ among all reported a-IGZO-based flash devices for high-density, low-power, and high-performance 3D NAND applications. Furthermore, a nonvolatile and area-efficient ternary content-addressable memory (TCAM) with only two parallel-connected a-IGZO FG transistors is experimentally demonstrated to address the TCAM scalability issue. Experimentally calibrated array-level simulations show that this design achieves at least a 240 × array-size scalability and a 2.7-fold reduction in search energy than TCAMs based on complementary metal-oxide-semiconductor technology using 16 transistors, two-transistor-two-resistive random access memory, and two-ferroelectric field-effect-transistor.

中文翻译：

具有非晶金属氧化物通道 3D NAND 兼容浮栅晶体管的计算关联存储器

自亚 20 纳米节点以来，3D NAND 一直在实现连续的 NAND 密度和成本扩展，超越传统的 2D NAND。然而，它的多晶硅沟道存在迁移率低、晶界引起的不稳定性以及在高度缩放的器件尺寸下器件与器件之间的电气特性差异大等问题。这些缺点可以通过引入非晶氧化铟镓锌 ( a -IGZO) 沟道来克服，它具有超低关断电流、后端生产线兼容性、比多晶硅更高的迁移率以及自由由于无定形性质的晶界。在这项工作中，报道了通道长度低至 60 nm 的超大规模浮栅 (FG) 晶体管，在所有报道的a 中实现了 127 µA µm ^{−1的最高导通电流。}- 基于 IGZO 的闪存设备，用于高密度、低功耗和高性能 3D NAND 应用。此外，实验证明了一种非易失性和面积高效的三元内容可寻址存储器 (TCAM)，它只有两个并联的a -IGZO FG 晶体管，可以解决 TCAM 的可扩展性问题。实验校准的阵列级模拟表明，与基于互补金属氧化物半导体技术的 TCAM 相比，该设计至少实现了 240 × 阵列尺寸可扩展性和搜索能量减少 2.7 倍电阻式随机存取存储器和双铁电场效应晶体管。

更新日期：2022-09-18

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