Ferroelectric/anti-ferroelectric/Ferroelectric(FE/AFE/FE) stack-based multi-bit memory has better device-to-device variation control compared to single-layer FE devices. The interplay between FE and AFE layers hasn’t been studied which influences the switching current profile. We simulate the polarization switching characteristics in AFE/FE double layers and analyze their differences from stand-alone devices due to the interplay between the layers. The impacts of spontaneous polarization charges and film thicknesses on the current shift are evaluated, which provides design guidance for these multi-layer devices.

中文翻译：

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AFE/FE 双层器件中的极化开关特性

与单层FE器件相比，基于铁电/反铁电/铁电（FE/AFE/FE）堆栈的多位存储器具有更好的器件间变化控制。尚未研究影响开关电流分布的 FE 和 AFE 层之间的相互作用。我们模拟了 AFE/FE 双层中的极化切换特性，并分析了它们与独立设备由于层之间的相互作用而产生的差异。评估了自发极化电荷和薄膜厚度对电流偏移的影响，为这些多层器件提供了设计指导。