Two-dimensional MXenes materials, owing to their unique electronic properties, have potential applications in novel low-dimensional spintronic devices. Here, the different adsorption structures of Fe-doped Zr₈C₄T₈ (T = F, O) monolayers are studied by first-principles calculations. It is found that the Zr₈C₄T₈ (T = F, O) structures are non-magnetic. The Fe doping, Zr₇FeC₄T₈ (T = F, O), not only introduces magnetism into the Zr₈C₄T₈ (T = F, O) system, but also changes the electronic properties of the Zr₈C₄T₈ (T = F, O). The electronic properties and magnetic anisotropy of Zr₇FeC₄O₈-I structure can be controlled by biaxial strain. In addition, under biaxial strains of 0%, ±2%, −4%, ±6%, and ±8%, the Zr₇FeC₄O₈-I structure shows half-metallic characteristic, but their electronic structure is formed for different reasons. At the biaxial strain of +4%, the monolayer Zr₇FeC₄O₈-I is a metal. The magnetism of the Zr₇FeC₄O₈-I structure is also affected by strain. Its magnetic moment is increased with the increase of biaxial strain. The magnetic anisotropy of the Zr₇FeC₄O₈-I is also different at different strain. When the applied strain is −8%, −6%, −4%, −2%, 0%, +2% and +4%, the Zr₇FeC₄O₈-I shows IMA, while it shows PMA at a strain of +6% and +8%. Our results reveal that the monolayer Zr₇FeC₄O₈-I have potential applications in spintronic devices.

二维 MXenes 材料由于其独特的电子特性，在新型低维自旋电子器件中具有潜在应用。 在这里，通过第一性原理计算研究了Fe掺杂的Zr ₈ C ₄ T ₈ ( T = F, O) 单分子层的不同吸附结构。发现Zr ₈ C ₄ T ₈ ( T  =F,O)结构是非磁性的。Fe掺杂，Zr ₇ FeC ₄ T ₈ ( T  = F, O)，不仅将磁性引入Zr ₈ C ₄ T ₈ ( T =F,O)体系，也改变了Zr ₈ C ₄ T ₈ ( T  = F,O)的电子性质。_{Zr 7} FeC ₄ O _{8 -I结构}的电子特性和磁各向异性可以通过双轴应变来控制。此外，在0%、±2%、-4%、±6%和±8%的双轴应变下，Zr ₇ FeC ₄ O ₈ -I结构呈现半金属特性，但其电子结构形成为不同的原因。在+4%的双轴应变下，单层Zr ₇ FeC ₄ O ₈ -I是金属。Zr _7的磁性FeC ₄ O ₈ -I结构也受应变影响。它的磁矩随着双轴应变的增加而增加。_{Zr 7} FeC ₄ O ₈ -I的磁各向异性在不同应变下也不同。当施加的应变为-8%、-6%、-4%、-2%、0%、+2%和+4%时，Zr ₇ FeC ₄ O ₈ -I显示IMA，而它显示PMA在a +6% 和 +8% 的应变。我们的研究结果表明，单层 Zr ₇ FeC ₄ O ₈ -I 在自旋电子器件中具有潜在应用。