In the current article, the binding energy and impurity-related photoionization cross-section are investigated for the case of an infinite confinement potential well model using a variational approach for hydrogen-like impurity states in strongly prolate ellipsoidal quantum dot. The binding energy is calculated as a function of ellipsoidal small and large semiaxes and as a function of impurity displacement. The behavior of the oscillator strength for the quantum transitions between the impurity ground state and the first two non-impurity states are considered for different values of incident light angles and geometrical parameters. In the work, we illustrate the results of photoionization cross-section computations depending on the incident photon energy for a range of incident angles and different values of impurity shift. It is revealed that the threshold frequency decreases with the increase of impurity displacement.

在当前的文章中，研究了无限限制势阱模型的结合能和与杂质相关的光电离截面，该模型使用强扁长椭球量子点中的类氢杂质态的变分方法。结合能被计算为椭圆形小半轴和大半轴的函数以及杂质位移的函数。的行为对于不同的入射光角度和几何参数值，考虑杂质基态和前两个非杂质态之间的量子跃迁的振荡器强度。在这项工作中，我们说明了光电离截面计算的结果，该计算取决于一系列入射角和不同杂质位移值的入射光子能量。结果表明，阈值频率随着杂质位移的增加而降低。