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Constructing layered double hydroxide derived heterogeneous Ti3C2Tx@S–MCoP (M = Ni, Mn, Zn) with S-vacancies to boost sodium storage performance
Journal of Materials Chemistry A ( IF 10.7 ) Pub Date : 2022-09-14 , DOI: 10.1039/d2ta05402g
Qun Li 1 , Qingze Jiao 1, 2 , Huanjun Li 1 , Yu Yan 3 , Chengxing Lu 3 , Xueran Shen 1 , Tingting Gu 1 , Wei Zhou 3 , Yun Zhao 1 , Hansheng Li 1 , Caihong Feng 1
Affiliation  

Poor conductivity and huge volume changes severely limit the application of layered double hydroxide (LDH) derived transition metal phosphides (TMPs) as anode materials for sodium ion batteries (SIBs). To solve these problems, Ti3C2Tx hollow spheres were prepared using PMMA spheres as a sacrificial template, and S-doped NiCoP nanosheets with rich S vacancies were grown on the surface of Ti3C2Tx through a stepwise strategy to obtain hollow Ti3C2Tx@S–NiCoP spheres. When used as an anode for SIBs, Ti3C2Tx@S–NiCoP shows a high reversible capacity of 563 mA h g−1 at 0.2 A g−1, ≈1.9 and 1.4 times that of S–NiCoP and Ti3C2Tx@NiCoP, respectively. It also delivers an outstanding cycling stability over 3000 cycles with a capacity decay of 0.005% per cycle. DFT calculations combined with XPS and XANES tests prove that the excellent electrochemical performance can be ascribed to the strong interaction at the hetero-interfaces of Ti3C2Tx@S–NiCoP, which can improve the conductivity and structural integrity. Furthermore, the rational hollow structure design can alleviate volume expansion and accelerate the diffusion of the electrolyte to improve the sodium storage kinetics of Ti3C2Tx@S–NiCoP. Notably, this work provides a general strategy for the preparation of bimetallic-based Ti3C2Tx@S–MCoP (M = Ni, Mn, Zn) with S-vacancies and opens up a new avenue for their application in the field of energy storage and conversion.

中文翻译:

构建具有 S 空位的层状双氢氧化物衍生的异质 Ti3C2Tx@S–MCoP (M = Ni, Mn, Zn) 以提高钠存储性能

导电性差和巨大的体积变化严重限制了层状双氢氧化物(LDH)衍生的过渡金属磷化物(TMP)作为钠离子电池(SIB)负极材料的应用。为了解决这些问题,以PMMA球为牺牲模板制备了Ti 3 C 2 T x空心球,并通过逐步策略在Ti 3 C 2 T x表面生长了富含S空位的S掺杂NiCoP纳米片。获得空心 Ti 3 C 2 T x @S–NiCoP 球。当用作 SIB 的阳极时,Ti 3 C 2 T x@S-NiCoP在 0.2 A g -1下显示出 563 mA hg -1的高可逆容量,分别是 S-NiCoP 和 Ti 3 C 2 T x @NiCoP 的 1.9 倍和 1.4 倍。它还提供超过 3000 次循环的出色循环稳定性,每个循环的容量衰减为 0.005%。DFT 计算结合 XPS 和 XANES 测试证明,优异的电化学性能可归因于 Ti 3 C 2 T x异质界面处的强相互作用@S–NiCoP,可以提高导电性和结构完整性。此外,合理的中空结构设计可以减轻体积膨胀并加速电解质的扩散,从而提高Ti 3 C 2 T x @S-NiCoP的钠储存动力学。值得注意的是,这项工作为制备具有 S 空位的双金属基 Ti 3 C 2 T x @S–MCoP (M = Ni, Mn, Zn) 提供了一般策略,并为其在该领域的应用开辟了一条新途径的能量存储和转换。
更新日期:2022-09-14
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