Wide band gap (WBG) power electronic devices, such as silicon carbide metal–oxide–semiconductor field-effect transistors (SiC MOSFETs) and gallium–nitride high-electron-mobility transistors (GaN HEMTs) have been widely used in various fields and occupied a certain share of the market with rapid momentum, owing to their excellent electrical, mechanical, and thermal properties. The reliability of WBG power electronic devices is inseparable from the reliability of power electronic systems and is a significant concern for the industry and for academia. This review attempts to summarize the recent progress in the failure mechanisms of WBG power electronic semiconductor chips, the reliability of WBG power electronic packaging, and the reliability models for predicting the remaining life of WBG devices. Firstly, the typical structures and dominant failure mechanisms of SiC MOSFETs and GaN HEMTs are discussed. This is followed by a description of power electronic packaging failure mechanisms and available packaging materials for WBG power electronic devices. In addition, the reliability models based on physics-of-failure (including time-dependent dielectric breakdown models, stress–strain models, and thermal cycling models), and data-driven models are introduced. This review may provide useful references for the reliability research of WBG power devices.

中文翻译：

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宽带隙电力电子半导体及封装的可靠性：综述

宽带隙（WBG）电力电子器件，如碳化硅金属氧化物半导体场效应晶体管（SiC MOSFET）和氮化镓高电子迁移率晶体管（GaN HEMT）已广泛应用于各个领域并占据凭借其出色的电气、机械和热性能，以迅猛的势头占领了一定的市场份额。WBG电力电子器件的可靠性与电力电子系统的可靠性密不可分，是工业界和学术界的重要关注点。本文试图总结WBG电力电子半导体芯片失效机理、WBG电力电子封装的可靠性以及WBG器件剩余寿命预测的可靠性模型等方面的最新进展。首先，讨论了 SiC MOSFET 和 GaN HEMT 的典型结构和主要失效机制。随后描述了电力电子封装失效机制和 WBG 电力电子器件可用的封装材料。此外，还介绍了基于失效物理的可靠性模型（包括时间相关的介电击穿模型、应力-应变模型和热循环模型）和数据驱动模型。该综述可为WBG功率器件的可靠性研究提供有益的参考。介绍了基于失效物理的可靠性模型（包括时间相关的介电击穿模型、应力-应变模型和热循环模型）和数据驱动模型。该综述可为WBG功率器件的可靠性研究提供有益的参考。介绍了基于失效物理的可靠性模型（包括时间相关的介电击穿模型、应力-应变模型和热循环模型）和数据驱动模型。该综述可为WBG功率器件的可靠性研究提供有益的参考。