An improved parasitic parameters extraction method for InP heterojunction bipolar transistor (HBT) is developed. The difference between this method and previous methods is that all parasitic parameters can be extracted by relying only on the S-parameters measured under the cut-off and normal bias conditions. All the capacitance parameters in the equivalent circuit at the low-frequency cut-off can be extracted by combining the analytical closed formulas and the parameter scanning method. The intrinsic resistance R_bi is obtained indirectly by extracting the extrinsic resistance R_e based on the Z-parameter method in the normal bias conditions. By de-embedding the parasitic capacitances, all the values of parasitic inductances and extrinsic resistances are obtained by the direct extraction method under the cut-off condition. The proposed method not only eliminates the critical measurement of the open-collector condition, but also greatly improves the efficiency and accuracy of parameter optimization. For different sizes and bias conditions of InP HBT devices, the excellent agreement between simulated and measured results is verified all over the frequency range of 0.4–50 GHz.

开发了一种改进的 InP 异质结双极晶体管 (HBT) 寄生参数提取方法。该方法与以往方法的不同之处在于，仅依靠在截止和正常偏置条件下测量的 S 参数即可提取所有寄生参数。结合解析闭合公式和参数扫描法，可以提取低频截止时等效电路中的所有电容参数。通过提取外在电阻R _e间接获得内在电阻R _bi基于正常偏置条件下的 Z 参数方法。通过去嵌入寄生电容，所有寄生电感和外来电阻的值都是在截止条件下通过直接提取的方法获得的。该方法不仅消除了集电极开路条件的关键测量，而且大大提高了参数优化的效率和准确性。对于 InP HBT 器件的不同尺寸和偏置条件，在 0.4-50 GHz 的频率范围内验证了仿真结果与测量结果之间的出色一致性。