Light-Regulated Anti-Ambipolar Transport with Multi-Logic States in Metal-WSe2-Metal Transistor,Advanced Electronic Materials

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Light-Regulated Anti-Ambipolar Transport with Multi-Logic States in Metal-WSe2-Metal Transistor
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2022-09-08 , DOI: 10.1002/aelm.202200649
Hanyu Wang _{1,

2} , Wei Gao _{1,

2,

3} , Peiting Wen _{1,

2} , He Yu _{1,

2} , Ying Huang _{1,

2} , Qian Yue _{1,

2} , Xiaozhou Wang _{1,

2,

3} , Nengjie Huo _{1,

2,

3}

Affiliation

With the advent of big data, multi-valued logic computing becomes an indispensable technology in the field of new micro-electronic devices. As a new concept attracting more attention in recent years, anti-ambipolar behavior shows its application potential in digital electronic and logic circuits. Here, the anti-ambipolar transistors (AATs) based on metal–WSe₂–metal configuration with dual contact barriers is fabricated. Under light illumination, the photocurrent as function of gate voltage exhibits anti-ambipolar behavior with a distinct peak which can be varied with incident light power. The appearance of anti-ambipolar transport is attributed to both contact barrier and photo-excited carriers. The variation of the Fermi level in WSe₂ regulated by gate voltage plays a key role in altering the dominant transport mechanism of the carrier type. This work proposes a new device concept that the photocarrier and barrier can induce an anti-ambipolar characteristic, guiding the new direction for the multi-valued logic/digital electronic applications.

中文翻译：

金属-WSe2-金属晶体管中具有多逻辑状态的光调节反双极传输

随着大数据的到来，多值逻辑计算成为新型微电子器件领域不可或缺的技术。反双极性行为作为近年来倍受关注的新概念，显示出其在数字电子和逻辑电路中的应用潜力。在这里，制造了基于金属-WSe _{2 -金属配置的具有双接触势垒的反双极晶体管 (AAT)。}在光照射下，作为栅极电压函数的光电流表现出具有明显峰值的反双极性行为，该峰值可以随入射光功率而变化。反双极性传输的出现归因于接触势垒和光激发载流子。_{WSe 2}中费米能级的变化由栅极电压调节的光在改变载流子类型的主要传输机制方面起着关键作用。这项工作提出了一种新的器件概念，即光载流子和势垒可以诱导反双极性特性，为多值逻辑/数字电子应用指明了新方向。

更新日期：2022-09-08

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