This article discusses three integration and packaging techniques for gap waveguides and monolithic microwave integrated circuits (MMICs) suitable for multilayer waveguide applications. Two vertical transitions between microstrips and ridge gap waveguides (RGWs) are presented. The first vertical transition connects RGW to a microstrip line from the top where a rectangular patch has been used. Measured results of the transition in a back-to-back structure show that the reflection coefficient is better than −10 dB from 75 to 83 GHz, and the insertion loss for a single transition over the frequency band is 0.65–0.85 dB. The second vertical transition connects RGW to a microstrip line from the back by a slot in the ground plane. Measured results of the transition in a back-to-back structure show that the reflection coefficient is better than −10 dB from 69 to 86 GHz, and the insertion loss for a single transition is 0.65–1 dB over the frequency band. Commercially available E-band MMIC amplifiers are integrated with RGWs using the two proposed transitions. Moreover, for the very first time, the integration of MMIC with inverted microstrip gap waveguide (IMGW) is realized by a compact packaging structure that utilizes bond wires and capacitive pads. All the three active integrations are consistent with the passive measurements in terms of operational bandwidth, losses, amplifier gain flatness, and unwanted resonance suppression.

中文翻译：

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适用于多层波导应用的间隙波导和 MMIC 的新型集成技术


本文讨论了适用于多层波导应用的间隙波导和单片微波集成电路 (MMIC) 的三种集成和封装技术。提出了微带线和脊隙波导（RGW）之间的两种垂直过渡。第一个垂直过渡将 RGW 连接到顶部的微带线，其中使用了矩形贴片。背对背结构过渡的测量结果表明，从75到83 GHz，反射系数优于-10 dB，并且该频段内单个过渡的插入损耗为0.65-0.85 dB。第二个垂直过渡通过接地平面中的槽从背面将 RGW 连接到微带线。背靠背结构过渡的测量结果表明，在69至86 GHz范围内，反射系数优于-10 dB，并且在该频段内单个过渡的插入损耗为0.65–1 dB。商用 E 频段 MMIC 放大器使用两种建议的转换与 RGW 集成。此外，首次通过利用键合线和电容焊盘的紧凑封装结构实现了MMIC与倒置微带间隙波导（IMGW）的集成。所有三种有源集成在工作带宽、损耗、放大器增益平坦度和不需要的谐振抑制方面都与无源测量一致。