Abstract

The TlInTe₂–Bi phase diagram was studied in the concentration region of 0–10 at % of Bi by complex methods of physicochemical analysis, and the bismuth solubility in TlInTe₂ at room temperature was established to be 5 at %. The electrophysical and dielectric properties of (TlInTe₂)_1 – xBi_x solid solutions were studied. Using the (TlInTe₂)_1 – xBi_x composition, where x = 0.05, as an example, bismuth impurities were shown to increase the conductivity in direction (001), change the hole conductivity of a TlInTe₂ crystal for electron type, and strongly increase the electric anisotropy of a TlInTe₂ crystal ρ_⊥/ρ_|| by more than 10³ times. The effect of bismuth impurities on the dielectric properties of TlInTe₂ crystals was also observed. Bismuth impurities formed barriers on the migration way of thallium ions and increased the temperature Ti of phase transition into the ion-conducting phase by 69 K in crystallographic direction [001] and 87 K in direction [110].

中文翻译：

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TlInTe2 晶体中铋的点缺陷：固溶体的电物理和介电性能

摘要

TlInTe ₂ -Bi 相图在Bi 的0-10 at % 浓度范围内通过复杂的物理化学分析方法进行了研究，确定室温下铋在TlInTe _{2中的溶解度为5 at %。}研究了(TlInTe ₂ ) _{1 –  x} Bi _x固溶体的电物理和介电性能。使用 (TlInTe ₂ ) _{1 –  x} Bi _x组成，其中x = 0.05，作为示例，铋杂质显示增加方向 (001) 的电导率，改变 TlInTe _{2的空穴电导率}晶体为电子型，强烈增加 TlInTe ₂晶体的电各向异性 ρ _⊥ /ρ _|| 10 ³倍以上。还观察到铋杂质对TlInTe _{2晶体的介电​​性能的影响。}铋杂质在铊离子的迁移路径上形成屏障，并使相变温度 Ti 在结晶方向 [001] 上增加了 69 K，在方向上增加了 87 K [110]。