Multiscale Modeling of Ion Dynamics in Memristive Elements,Physica Status Solidi (B) - Basic Solid State Physics

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Multiscale Modeling of Ion Dynamics in Memristive Elements
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2022-09-06 , DOI: 10.1002/pssb.202200151
Andrey A. Zhuravlev ₁ , Karine K. Abgaryan ₁ , Dmitry L. Reviznikov ₁

Affiliation

A multiscale computational scheme is proposed for ion dynamics that allows modeling based on primary information—data on the chemical composition of the material and its crystal structure. The scheme includes quantum mechanical and molecular dynamics modeling as well as Monte Carlo simulation of ion and electron dynamics taking into account the real crystal structure. Approbation of the proposed approach is carried out on a silicon oxide memristive element. The results of computational experiments are presented that demonstrate the stages of growth and destruction of a conductive filament under the action of a time-varying voltage.

中文翻译：

忆阻元件中离子动力学的多尺度建模

提出了一种用于离子动力学的多尺度计算方案，该方案允许基于主要信息（有关材料的化学成分及其晶体结构的数据）进行建模。该方案包括量子力学和分子动力学建模以及考虑到真实晶体结构的离子和电子动力学的蒙特卡罗模拟。对所提出的方法的认可是在氧化硅忆阻元件上进行的。计算实验的结果展示了导电丝在时变电压作用下的生长和破坏阶段。

更新日期：2022-09-06

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