Transparent, Multivalued Transistors Enabled By Area-Selective Optical Doping on Ga-Doped IZTO Thin Films,Advanced Electronic Materials

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Transparent, Multivalued Transistors Enabled By Area-Selective Optical Doping on Ga-Doped IZTO Thin Films
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2022-09-07 , DOI: 10.1002/aelm.202200771
Jihyun Kim ₁ , Ju Hyeon Lee ₁ , Myeongjin Jung ₁ , Jae Hyung Kim ₁ , Jung‐Min Park ₁ , Han‐Ki Kim _{1,

2} , Joohoon Kang _{1,

2}

Affiliation

Multivalued transistors are demonstrated on wafer-scale, sputtered gallium-doped indium-zinc-tin-oxide (Ga-doped IZTO) thin films by area-selective optical doping. Cation elemental doping and ultraviolet (UV) exposure are representative techniques to control the carrier concentrations of metal oxide semiconductors. In this work, both doping techniques are exploited to design a pseudo-heterojunction on a monolithic Ga-doped IZTO thin film to generate multivalued electrical characteristics. The resulting semiconductor channel possessed two distinct work functions (i.e., smaller work function on the UV-exposed area with respect to the masked Ga-doped IZTO area), which resulted in sequential activation with two turn-on voltages under a gate voltage sweep. Consequently, a stable intermediate state is generated for the ternary operation of the devices. This work further demonstrates the fabrication of transparent ternary device arrays by utilizing transparent elements including indium tin oxide (ITO), Ga-doped IZTO, SiO₂, and glass as electrodes, semiconducting channels, dielectric layers, and substrates, respectively.

中文翻译：

通过在 Ga 掺杂 IZTO 薄膜上进行区域选择性光学掺杂实现透明、多值晶体管

通过区域选择性光学掺杂，在晶圆级溅射掺镓氧化铟锌锡 (Ga 掺杂 IZTO) 薄膜上展示了多值晶体管。阳离子元素掺杂和紫外线 (UV) 曝光是控制金属氧化物半导体载流子浓度的代表性技术。在这项工作中，两种掺杂技术都被用来在单片 Ga 掺杂 IZTO 薄膜上设计伪异质结，以产生多值电特性。所得半导体沟道具有两个不同的功函数（即，相对于掩蔽的掺杂 Ga 的 IZTO 区域，UV 曝光区域的功函数较小），这导致在栅极电压扫描下使用两个开启电压的顺序激活。因此，为器件的三元操作生成稳定的中间状态。₂和玻璃分别作为电极、半导体通道、介电层和基板。

更新日期：2022-09-07

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