In this paper, for the first time an analytical all region model of Transition metal dichalcogenide based FET has been developed to represent the current–voltage characteristics of the device in ultra-short channel regime. Starting from Gauss’s law, Poisson’s equation is formulated and short channel subthreshold current model is developed subsequently. In order to include fringing field effect, the gaussian box is considered for top and bottom oxides along with channel. Next, Velocity saturation model is developed by considering mobile charges due to top-bottom gates and region-wise field dependent mobility in the channel utilizing the drift diffusion approach. Both the models are then unified by finding the natural points of transition from one model to other. The intraband source to drain tunneling has also been incorporated to develop generalized 2-D material based FET model. Veracity of the model has been verified with NEGF simulations for different device parameters and excellent congruence is observed. The effect of the interface trap charge density has also been included in the model and its effects on the transfer characteristics are investigated.

本文首次建立了过渡金属二硫属化物的全区域解析模型已经开发了基于 FET 的器件来表示器件在超短沟道状态下的电流 - 电压特性。从高斯定律出发，建立了泊松方程，随后建立了短通道亚阈值电流模型。为了包括边缘场效应，高斯盒被考虑用于顶部和底部氧化物以及通道。接下来，通过使用漂移扩散方法考虑由于顶底栅极和区域中的场依赖迁移率在沟道中的移动电荷，开发了速度饱和模型。然后通过找到从一个模型到另一个模型的自然过渡点来统一这两个模型。带内源漏隧穿也已被纳入开发基于广义二维材料的 FET 模型。模型的准确性已经通过 NEGF 模拟对不同的设备参数进行了验证，并且观察到了极好的一致性。模型中还包含了界面陷阱电荷密度的影响，并研究了它对传输特性的影响。