Antiferromagnetic materials, which have ordered but alternating magnetic moments, exhibit fast spin dynamics and produce negligible stray fields, and could be used to build high-density, high-speed memory devices with low power consumption. However, the efficient electrical detection and manipulation of antiferromagnetic moments is challenging. Here we show that the spin current and antiferromagnetic moments in the topological insulator/antiferromagnetic insulator bilayer (Bi,Sb)₂Te₃/α-Fe₂O₃ can be controlled via topological surface states. In particular, the orientation of the antiferromagnetic moments in α-Fe₂O₃ can modulate the spin current reflection at the bilayer interface. In turn, the spin current can control the moment rotation in the antiferromagnetic insulator by means of a giant spin–orbit torque generated by the topological surface state. The required threshold switching current density is 3.5 × 10⁶ A cm⁻² at room temperature, which is one order of magnitude smaller than that required in heavy-metal/antiferromagnetic insulator systems.

具有有序但交替的磁矩的反铁磁材料表现出快速的自旋动力学并产生可忽略不计的杂散场，可用于构建低功耗的高密度、高速存储设备。然而，反铁磁矩的有效电检测和操纵具有挑战性。在这里，我们表明拓扑绝缘体/反铁磁绝缘体双层 (Bi,Sb) ₂ Te ₃ /α-Fe ₂ O ₃中的自旋电流和反铁磁矩可以通过拓扑表面态进行控制。特别是，α-Fe ₂ O _{3中反铁磁矩的方向}可以调节双层界面处的自旋电流反射。反过来，自旋电流可以通过拓扑表面态产生的巨大自旋轨道扭矩来控制反铁磁绝缘体中的力矩旋转。室温下所需的阈值开关电流密度为 3.5 × 10 ⁶  A cm ^{-2 ，比重金属/反铁磁绝缘体系统所需的低一个数量级。}