High dielectric loss and poor temperature stability are the current barriers to the application of dielectric materials. In present work, we synthesized a system of acceptor Gd³⁺ and donor Ta⁵⁺ co-doped (Gd_0.5Ta_0.5)_xTi_1-xO₂ (GTTOx, x = 0, 0.01, 0.02, 0.04, 0.06) ceramics to enhance dielectric response. It was found that a colossal permittivity (CP, 2.65 × 10⁴@1 kHz, 2.37 × 10⁴@1 MHz), a very low dielectric loss (tanδ, 0.007@1 kHz, 0.03@1 MHz), good stability of frequency (20–10⁶ Hz) and temperature (RT–250 °C, Δε′ (T)/ε′₃₀ < ± 15%, at 1 kHz) were achieved simultaneously in GTTO0.01 ceramic. Complex impedance spectroscopy, XPS, SEM, and Raman spectroscopy were used to investigate the reasons for the improved dielectric properties. The result indicated that the main reasons for CP and low dielectric loss are the synergistic effect of the electron pinning defect-dipole (EPDD) model, the internal blocking layer capacitance (IBLC) mechanism, and electrode response. This work provides a promising approach for the design of defect-related high-performance giant dielectric ceramics.

介电损耗高、温度稳定性差是目前介电材料应用的障碍。在目前的工作中，我们合成了受体 Gd ³⁺和供体 Ta ⁵⁺共掺杂 (Gd _0.5 Ta _0.5 ) _x Ti _{1- x} O ₂ (GTTO x , x  = 0, 0.01, 0.02, 0.04, 0.06) 的体系陶瓷，以提高介电响应。结果发现，巨大的介电常数（CP，​​2.65 × 10 ⁴ @1 kHz，2.37 × 10 ⁴ @1 MHz），非常低的介电损耗（tan δ，0.007@1 kHz，0.03 @1 MHz），良好的稳定性频率（20-10 ⁶ Hz) 和温度 (RT–250 °C, Δ ε' ( T )/ ε' ₃₀  < ± 15%, at 1 kHz) 在 GTTO0.01 陶瓷中同时实现。复阻抗谱、XPS、SEM 和拉曼光谱用于研究改善介电性能的原因。结果表明，CP 和低介电损耗的主要原因是电子钉扎缺陷偶极子 (EPDD) 模型、内部阻挡层电容 (IBLC) 机制和电极响应的协同效应。这项工作为缺陷相关高性能巨型介电陶瓷的设计提供了一种有前途的方法。