The automotive industry is experiencing a remarkable move from the internal combustion engine (ICE) to an all-electric power platform. This natural shift is essentially supported by electric drive development where wide-bandgap (WBG) materials are at the center of this transformation. The shift to gallium nitride (GaN)- or silicon carbide (SiC)-based power electronics is taking place due to the theoretical limits of Si MOSFETs that has been reached by the industry for many power systems. Battery charging is maybe the first high-volume market to demonstrate GaN adoption, and SiC devices are now increasingly used in high-voltage power converters with stringent size, weight, and power requirements [1]. Definitively, EVs are considered the heart of the global push toward a more sustainable future.

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汽车电子的下一步是什么？ [汽车电子]


汽车行业正在经历从内燃机（ICE）到全电动平台的显着转变。这种自然转变本质上是由电力驱动开发支持的，其中宽带隙 (WBG) 材料是这一转变的核心。由于许多电力系统行业已达到 Si MOSFET 的理论极限，因此正在向基于氮化镓 (GaN) 或碳化硅 (SiC) 的电力电子器件转变。电池充电可能是第一个展示 GaN 采用的大批量市场，而 SiC 器件现在越来越多地用于具有严格尺寸、重量和功率要求的高压电源转换器中 [1]。毫无疑问，电动汽车被认为是全球推动更可持续未来的核心。