In this manuscript, a series of Spiro-OMeTAD/CH₃NH₃(MA)PbI₃/ZnO p-i-n heterojunction PDs are prepared and the photoresponses are well studied by modifying the MAPbI₃/ZnO interface with a PCBM layer and modulating the ZnO film thickness ranging from 20 to 95 nm. The PD shows an excellent self-powered capability due to the suitable band alignment. After introducing the PCBM layer, both the photoresponse and stability are greatly improved, which can be attributed to its suitable band level and outstanding properties of contact passivation and interfacial modification. Besides, it is indicated that the photoresponse is strongly dependent on the thickness of the ZnO layer. The PD with a 65 nm-thick ZnO layer achieves the best performances in a broadband spectral range of ∼350 to ∼800 nm with the maximum responsivity (R) of 0.443 A/W and response times of 0.25/0.14 s. This work provides an essential insight for designing high-performance ZnO electron-transport layer-based perovskite heterojunction PDs.

在这份手稿中，制备了一系列 Spiro-OMeTAD/CH ₃ NH ₃ (MA)PbI ₃ /ZnO pin 异质结 PD，并通过修改 MAPbI _{3对光响应进行了很好的研究。}/ZnO 界面与 PCBM 层并调制 ZnO 薄膜厚度范围为 20 至 95 nm。由于合适的频带对齐，PD 显示出出色的自供电能力。引入PCBM层后，无论是光响应还是稳定性都有很大的提高，这要归功于其合适的能带水平以及出色的接触钝化和界面改性性能。此外，表明光响应强烈依赖于 ZnO 层的厚度。具有 65 nm 厚 ZnO 层的 PD 在 ∼350 至 ∼800 nm 的宽带光谱范围内实现了最佳性能，具有最大的响应度 ( R) 为 0.443 A/W，响应时间为 0.25/0.14 s。这项工作为设计基于高性能 ZnO 电子传输层的钙钛矿异质结 PD 提供了重要的见解。