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Mechanism Analysis and Highly Scaled Aluminum Nitride-Based Self-Rectifying Memristors
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2022-08-28 , DOI: 10.1002/aelm.202200702 Kailiang Zhang 1 , Xuanyu Zhao 1 , Yemei Han 1 , Kai Hu 1 , Yujian Zhang 1 , Lianqiu Li 1 , Qiaozhen Zhou 1 , Xin Shan 1 , Xin Lin 1 , Ke Shan 1 , Zexia Ma 1 , Qi Liu 2 , Zhitang Song 3 , Fang Wang 1
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2022-08-28 , DOI: 10.1002/aelm.202200702 Kailiang Zhang 1 , Xuanyu Zhao 1 , Yemei Han 1 , Kai Hu 1 , Yujian Zhang 1 , Lianqiu Li 1 , Qiaozhen Zhou 1 , Xin Shan 1 , Xin Lin 1 , Ke Shan 1 , Zexia Ma 1 , Qi Liu 2 , Zhitang Song 3 , Fang Wang 1
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Storage-class memory and advanced neuromorphic-related applications place an urgent requirement on large-scale, highly compacted memristor array. However, crosstalk issue constrains the addressing accuracy and effective data scale of current array-level memristor, which is detrimental to the industrial realization. Herein, scalability and physical processes of Al/AlN/W self-rectifying memristor are investigated. The devices exhibit improved rectification ratio from 94 to 2600, switching ratio from 286 to 6099, higher uniformity, reliability, and nonvolatility by scaling the size from 10 to 5 µm. The application of aluminum nitride as active layer material not only makes the electrical properties more sensitive to the external electric field, but also dominates the switching process by constructing nitrogen vacancy conducting filaments, as demonstrated by a combination of scalability and mechanistic analysis. The high-scaled AlN-based self-rectifying memristor exhibits a maximum effective array size of N = 14 372, which is 53 times enhancement compared to 10 µm size cells. The Al/AlN/W self-rectifying memristor is confirmed to have a strong ability to suppress sneak currents and has the potential to serve large-scale array-level applications.
中文翻译：
机理分析和大尺寸氮化铝基自整流忆阻器
存储级内存和高级神经形态相关应用对大规模、高度紧凑的忆阻器阵列提出了迫切要求。然而，串扰问题限制了当前阵列级忆阻器的寻址精度和有效数据规模，不利于工业化实现。在此，研究了 Al/AlN/W 自整流忆阻器的可扩展性和物理过程。这些器件的整流比从 94 提高到 2600，开关比从 286 提高到 6099，通过将尺寸从 10 缩小到 5 µm，具有更高的均匀性、可靠性和非易失性。氮化铝作为活性层材料的应用，不仅使电学特性对外部电场更加敏感，而且通过构建氮空位导电丝来主导开关过程，正如可扩展性和机械分析的结合所证明的那样。基于 AlN 的大尺寸自整流忆阻器的最大有效阵列尺寸为 N = 14 372，与 10 µm 尺寸的单元相比，增强了 53 倍。Al/AlN/W自整流忆阻器被证实具有很强的抑制潜行电流的能力，具有服务于大规模阵列级应用的潜力。
更新日期：2022-08-28
中文翻译：
机理分析和大尺寸氮化铝基自整流忆阻器
存储级内存和高级神经形态相关应用对大规模、高度紧凑的忆阻器阵列提出了迫切要求。然而，串扰问题限制了当前阵列级忆阻器的寻址精度和有效数据规模，不利于工业化实现。在此，研究了 Al/AlN/W 自整流忆阻器的可扩展性和物理过程。这些器件的整流比从 94 提高到 2600，开关比从 286 提高到 6099，通过将尺寸从 10 缩小到 5 µm，具有更高的均匀性、可靠性和非易失性。氮化铝作为活性层材料的应用，不仅使电学特性对外部电场更加敏感，而且通过构建氮空位导电丝来主导开关过程，正如可扩展性和机械分析的结合所证明的那样。基于 AlN 的大尺寸自整流忆阻器的最大有效阵列尺寸为 N = 14 372，与 10 µm 尺寸的单元相比，增强了 53 倍。Al/AlN/W自整流忆阻器被证实具有很强的抑制潜行电流的能力，具有服务于大规模阵列级应用的潜力。
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