Unraveling the Atomic Redox Process in Quantum Conductance and Synaptic Events for Neuromorphic Computing,Advanced Electronic Materials

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Unraveling the Atomic Redox Process in Quantum Conductance and Synaptic Events for Neuromorphic Computing
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2022-08-28 , DOI: 10.1002/aelm.202200509
Karthik Krishnan ₁ , Saranyan Vijayaraghavan ₁

Affiliation

Manipulation of atomic point contact (APC) in memristive devices is considered as an essential approach in emulating biological synaptic functions and paves the way for developing neuromorphic computing systems. In this article, the conductance modulation in a polyvinylimidazole (PVI)-based memristor that mimics the synaptic functions underlying the sensory memory, short-term memory, long-term memory, and forgetting events of the human brain, is demonstrated. A detailed analysis of resistive switching, quantum conductance, and synaptic behaviors in the silver (Ag) included PVI memristor is investigated by means of DC sweep and pulse current–voltage (I–V) measurements. Based on the synaptic plasticity of the Ag-PVI memristor, the biological synaptic functions such as learning and forgetting two images are mimicked using 5 × 5 synaptic memristor arrays. To explain the relationship between the atomic redox process and synaptic events in the memristor, the I–V/cyclic voltammetry study is introduced. As a consequence, the concentration of charges in the APC region increases as the conductance state increases. This study is essential in order to explore the progressive growth of APC under confined redox reaction in the electrochemical metallization-based memristors for developing both synaptic devices and high-density multilevel memories.

中文翻译：

揭示神经形态计算的量子电导和突触事件中的原子氧化还原过程

在忆阻设备中操纵原子点接触 (APC) 被认为是模拟生物突触功能的基本方法，并为开发神经形态计算系统铺平了道路。在本文中，展示了基于聚乙烯咪唑 (PVI) 的忆阻器中的电导调制，该忆阻器模拟了人脑的感觉记忆、短期记忆、长期记忆和遗忘事件背后的突触功能。通过直流扫描和脉冲电流电压（I-V）测量。基于 Ag-PVI 忆阻器的突触可塑性，使用 5×5 突触忆阻器阵列模拟了学习和忘记两个图像等生物突触功能。为了解释忆阻器中原子氧化还原过程与突触事件之间的关系，引入了I-V / 循环伏安研究。因此，APC 区域中的电荷浓度随着电导状态的增加而增加。这项研究对于探索基于电化学金属化的忆阻器中受限氧化还原反应下 APC 的逐步生长对于开发突触器件和高密度多级存储器至关重要。

更新日期：2022-08-28

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