Effect of V–III Ratio-Based Growth Mode on the Surface Morphology, Strain Relaxation, and Dislocation Density of AlN Films Grown by Metal-Organic Chemical Vapor Deposition,Physica Status Solidi (B) - Basic Solid State Physics

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Effect of V–III Ratio-Based Growth Mode on the Surface Morphology, Strain Relaxation, and Dislocation Density of AlN Films Grown by Metal-Organic Chemical Vapor Deposition
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2022-08-26 , DOI: 10.1002/pssb.202200279
Li Zhang ₁ , Junshuai Li ₂ , Xuguang Deng ₁ , Kun Xu ₁ , Xin Zhou _{1,

3} , Xuan Zhang ₁ , Yongjian Ma _{1,

4} , Feng Yang ₁ , Yaming Fan ₁ , Baoshun Zhang ₁

Affiliation

Herein, regulation of the growth mode through manipulating the V–III ratio during metal-organic chemical vapor deposition (MOCVD) growth of AlN films on c-plane sapphire substrates and optimization of the crystalline quality and surface morphology of AlN films are demonstrated. Based on detailed analyses of the evolution process of surface morphology, dislocation annihilation, and stress state of the AlN film during MOCVD growth, it is found that 2D rather than 3D growth mode introduces tensile stress as well as promotes edge-type threading dislocation (ETD) propagation and crack generation, while 3D growth mode produces rough surface. These results would help to further understand the AlN growth mechanism and provide important guidance on the preparation of AlN-related epitaxial structure.

中文翻译：

基于 V–III 比的生长模式对金属有机化学气相沉积法生长的 AlN 薄膜的表面形貌、应变松弛和位错密度的影响

在此，证明了通过在c面蓝宝石衬底上的金属有机化学气相沉积 (MOCVD) 生长 AlN 薄膜过程中控制 V-III 比来调节生长模式，并优化了 AlN 薄膜的晶体质量和表面形态。通过详细分析MOCVD生长过程中AlN薄膜的表面形貌、位错湮灭和应力状态的演化过程，发现2D而不是3D生长模式引入了拉应力，并促进了边缘型螺纹位错（ETD） ) 传播和裂纹产生，而 3D 生长模式产生粗糙表面。这些结果将有助于进一步了解AlN的生长机理，为AlN相关外延结构的制备提供重要指导。

更新日期：2022-08-26

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