Transition metal ion doping is an effective strategy by which to enhance the photocatalytic activity of semiconductor materials. Herein, Ni-doped TiO₂/Ti₃C₂ photocatalysts were designed and fabricated using a simple dipping method and their catalytic performance was verified via the degradation of rhodamine B (RhB). Ni doping induces the formation of a defect energy level in TiO₂, which shortens the transition distance of photogenerated electrons. Ti₃C₂ acts as a hole acceptor, which is conducive to the transfer of photogenerated charge. The results show that the Ni-doped TiO₂/Ti₃C₂ heterojunction structure exhibits the lowest photoluminescence peak intensity, the highest instantaneous current, and excellent photocatalytic performance compared to TiO₂/Ti₃C₂ and TiO₂. At optimal Ni content, the removal efficiency of RhB is 90%, around 3.7 times higher than that of pure TiO₂. This work details the preparation of an excellent Ni-doped heterojunction structure for enhanced photocatalytic performance, demonstrating an effective strategy by which to improve the charge separation ability.

过渡金属离子掺杂是提高半导体材料光催化活性的有效策略。在此，使用简单的浸渍方法设计和制造了Ni掺杂的TiO ₂ /Ti ₃ C _{2光催化剂，并通过}罗丹明B（RhB）的降解验证了它们的催化性能。_{Ni掺杂诱导TiO 2}中缺陷能级的形成，这缩短了光生电子的跃迁距离。Ti ₃ C ₂作为空穴受体，有利于光生电荷的转移。结果表明，Ni掺杂的TiO ₂ /Ti ₃ C₂异质结结构与TiO ₂ /Ti ₃ C ₂和TiO ₂相比，具有最低的光致发光峰强度、最高的瞬时电流和优异的光催化性能。_{在最佳Ni含量下，RhB的去除效率为90%，是纯TiO 2}的3.7倍左右。这项工作详细介绍了制备优异的 Ni 掺杂异质结结构以增强光催化性能，展示了一种提高电荷分离能力的有效策略。