Reconfigurable Complementary and Combinational Logic Based on Monolithic and Single-Crystalline Al-Si Heterostructures,Advanced Electronic Materials

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Reconfigurable Complementary and Combinational Logic Based on Monolithic and Single-Crystalline Al-Si Heterostructures
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2022-08-26 , DOI: 10.1002/aelm.202200567
Raphael Böckle ₁ , Masiar Sistani ₁ , Martina Bažíková ₁ , Lukas Wind ₁ , Zahra Sadre‐Momtaz ₂ , Martien I. den Hertog ₂ , Corban G. E. Murphey ₃ , James F. Cahoon ₃ , Walter M. Weber ₁

Affiliation

Metal-semiconductor heterostructures providing geometrically reproducible and abrupt Schottky nanojunctions are highly anticipated for the realization of emerging electronic technologies. This specifically holds for reconfigurable field-effect transistors, capable of dynamically altering the operation mode between n- or p-type even during run-time. Targeting the enhancement of fabrication reproducibility and electrical balancing between operation modes, here a nanoscale Al-Si-Al nanowire heterostructure with single elementary, monocrystalline Al leads and sharp Schottky junctions is implemented. Utilizing a three top-gate architecture, reconfiguration on transistor level is enabled. Having devised symmetric on-currents as well as threshold voltages for n- and p-type operation as a necessary requirement to exploit complementary reconfigurable circuits, selected implementations of logic gates such as inverters and combinational wired-AND gates are reported. In this respect, exploiting the advantages of the proposed multi-gate transistor architecture and offering additional logical inputs, the device functionality can be expanded by transforming a single transistor into a logic gate. Importantly, the demonstrated Al-Si material system and thereof shown logic gates show high compatibility with state-of-the-art complementary metal-oxide semiconductor technology. Additionally, exploiting reconfiguration at the device level, this platform may pave the way for future adaptive computing systems with low-power consumption and reduced footprint, enabling novel circuit paradigms.

中文翻译：

基于单片和单晶铝硅异质结构的可重构互补和组合逻辑

金属-半导体异质结构提供几何可重复和突然的肖特基纳米结，对于新兴电子技术的实现备受期待。这特别适用于可重构场效应晶体管，即使在运行时也能够动态改变 n 型或 p 型之间的工作模式。为了提高制造再现性和操作模式之间的电平衡，这里实现了具有单元素、单晶铝引线和尖锐肖特基结的纳米级铝硅铝纳米线异质结构。利用三顶栅架构，可实现晶体管级别的重新配置。设计了对称导通电流以及 n 型和 p 型操作的阈值电压作为利用互补可重构电路的必要条件，报告了逻辑门的选定实现，例如反相器和组合线与门。在这方面，利用所提出的多栅极晶体管架构的优势并提供额外的逻辑输入，可以通过将单个晶体管转换为逻辑门来扩展设备功能。重要的是，所展示的铝硅材料系统及其所示逻辑门显示出与最先进的互补金属氧化物半导体技术的高度兼容性。此外，利用设备级别的重新配置，

更新日期：2022-08-26

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