In semiconductor samples with a low density of free charge carriers the current response to an intense electromagnetic pulse is weak and can be treated as a perturbation in the finite-difference-time-domain calculation of the electromagnetic field. Up to first order the electric field that drives the particles does not depend on their density and the particles can be simulated independently. This opens the door for massively parallel Monte Carlo simulations that can be processed efficiently on a computer cluster and a large number of particles can be simulated resulting in a very low noise level. By this full-band Monte Carlo finite-difference-time-domain approach the generation of higher harmonics in p-doped silicon at cryogenic temperatures is investigated. It is found that the higher harmonics are mostly due to the warped valence bands, which are discretized on adaptive unstructured tetrahedral grids in the k-space to avoid numerical artifacts.

在具有低密度自由电荷载流子的半导体样品中，电流对强电磁脉冲的响应很弱，可以视为电磁场有限差分时域计算中的扰动。直到一阶驱动粒子的电场不依赖于它们的密度，并且可以独立模拟粒子。这为大规模并行蒙特卡罗模拟打开了大门，该模拟可以在计算机集群上有效处理，并且可以模拟大量粒子，从而产生非常低的噪声水平。通过这种全频带蒙特卡罗有限差分时域方法，研究了低温下 p 掺杂硅中高次谐波的产生。发现高次谐波主要是由于价带扭曲，