This paper presents the capacitance modelling of RF MEMS shunt switch by using the parallel plate, fringing field, and parasitic capacitance. The model carried out fringing capacitance due to the etched holes and thickness of the beam. The analytical proposed modelling is evaluated in both up and downstate capacitance of the switch. The proposed switch simulation results are performed in the 3D simulator COMSOL multiphysics tool. The variation of capacitance analysis is evaluated by changing the dielectric thickness, air gap, and ligament efficiency (µ) are taken out and these analytical and simulation results are compared with benchmark models for evaluating capacitances in both up and downstate of the switch. The error percentage contribution of up and downstate is 1.61% and 0.57%, by comparing benchmark models, the proposed empirical model is obtained less percentage with ligament efficiency (µ) 0.7, dielectric thickness is 0.1 µm, and beam thickness is 0.5 µm.

本文介绍了使用平行板、边缘场和寄生电容对射频 MEMS 并联开关的电容建模。由于蚀刻孔和梁的厚度，该模型执行了边缘电容。分析建议的建模在开关的上升和下降状态电容中进行了评估。所提出的开关仿真结果在 3D 仿真器 COMSOL 多物理场工具中执行。通过改变电介质厚度、气隙和韧带效率 (µ) 来评估电容分析的变化，并将这些分析和模拟结果与基准模型进行比较，以评估开关在上下状态下的电容。通过比较基准模型，up 和 downstate 的错误百分比贡献分别为 1.61% 和 0.57%，