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Research on Field-Assisted Gallium Nitride Nanorod Array Photocathode
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2022-08-20 , DOI: 10.1002/pssb.202200213 Lei Liu 1, 2 , Xingyue Zhangyang 2 , Feifei Lu 2 , Jian Tian 2
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2022-08-20 , DOI: 10.1002/pssb.202200213 Lei Liu 1, 2 , Xingyue Zhangyang 2 , Feifei Lu 2 , Jian Tian 2
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To improve the electron collection efficiency of gallium nitride (GaN) nanorod array photocathode, external electric field is used to assist collect photoelectrons and a theoretical model of field-assisted photoelectric emission for GaN nanorod array is established herein. The results indicate that inclined incident light can improve the photoelectron collection efficiency on the side surface of the nanorod and that external electric field can promote the drifting of the photoelectron to the top surface of the nanorod. The square array with a filling fraction of 0.7 reaches its maximum photoelectron collection efficiency at the incident angle of 5° and field intensity of 0.1 V μm−1. This paper might play a theoretical guiding role in the fabrication of photodetectors with high photoelectric conversion efficiency.
中文翻译：
场辅助氮化镓纳米棒阵列光电阴极的研究
为提高氮化镓(GaN)纳米棒阵列光电阴极的电子收集效率，采用外加电场辅助收集光电子，建立了GaN纳米棒阵列场辅助光电发射的理论模型。结果表明，倾斜入射光可以提高纳米棒侧面的光电子收集效率，外加电场可以促进光电子向纳米棒顶面的漂移。填充分数为0.7的方阵在入射角为5°、场强为0.1 V μm −1时达到最大光电子收集效率. 该论文有望对制备具有高光电转换效率的光电探测器起到理论指导作用。
更新日期：2022-08-20
中文翻译：
场辅助氮化镓纳米棒阵列光电阴极的研究
为提高氮化镓(GaN)纳米棒阵列光电阴极的电子收集效率，采用外加电场辅助收集光电子，建立了GaN纳米棒阵列场辅助光电发射的理论模型。结果表明，倾斜入射光可以提高纳米棒侧面的光电子收集效率，外加电场可以促进光电子向纳米棒顶面的漂移。填充分数为0.7的方阵在入射角为5°、场强为0.1 V μm −1时达到最大光电子收集效率. 该论文有望对制备具有高光电转换效率的光电探测器起到理论指导作用。
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