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Sensing Sub-Surface Strain in GaAsBi(001) Surfaces by Reflectance Anisotropy Spectroscopy
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2022-08-18 , DOI: 10.1002/pssb.202200237 Beatrice Bonanni 1 , Laura Fazi 1 , Elisa Tisbi 1 , Ernesto Placidi 2 , Fabrizio Arciprete 1 , Claudio Goletti 1
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2022-08-18 , DOI: 10.1002/pssb.202200237 Beatrice Bonanni 1 , Laura Fazi 1 , Elisa Tisbi 1 , Ernesto Placidi 2 , Fabrizio Arciprete 1 , Claudio Goletti 1
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Reflectance anisotropy spectroscopy (RAS) is applied to study the reconstructed GaAsBi(001) surfaces at room temperature. Arsenic-capped GaAsBi samples with 7% Bi concentration are grown by molecular beam epitaxy (MBE) in nearly matched conditions on a proper buffer layer and annealed in ultra-high vacuum (UHV). Low energy electron diffraction (LEED) shows that, following the As decapping, a 2 × 3/1 × 3 phase (Bi-rich) is obtained after annealing the sample at 400 °C, while subsequent annealing at 450 °C yields a deterioration of the surface order. RAS spectra measured in situ allow to definitely confirm that the characteristic Bi-dependent anisotropy measured below 2.5 eV has not a true surface origin, although being connected to the surface: it is related to the strain of the directional bonds between Bi atoms existing at the surface and below the surface. This result has a twofold significance: it recommends that previous attributions to the surface of RAS anisotropy features in III–V semiconductors should be in some cases revisited; for the future, it shows that RAS is suitable to characterize 2D-layered materials, and to investigate the consequences of strain in the electronic properties of low-dimensional systems.
中文翻译：
通过反射各向异性光谱法检测 GaAsBi(001) 表面的次表面应变
反射各向异性光谱 (RAS) 用于研究室温下重建的 GaAsBi(001) 表面。具有 7% Bi 浓度的砷封盖 GaAsBi 样品通过分子束外延 (MBE) 在适当的缓冲层上在几乎匹配的条件下生长，并在超高真空 (UHV) 中退火。低能电子衍射 (LEED) 表明，在 As 脱帽之后，样品在 400 °C 退火后获得 2 × 3/1 × 3 相（富含 Bi），而随后在 450 °C 退火会产生劣化表面秩序。原位测量的 RAS 光谱可以明确地证实，低于 2.5 eV 测量的特征 Bi 相关各向异性没有真正的表面起源，尽管连接到表面：它与存在于表面和表面下的Bi原子之间的定向键的应变有关。这一结果具有双重意义：它建议在某些情况下应重新审视先前对 III-V 族半导体中 RAS 各向异性特征表面的归因；对于未来，它表明 RAS 适用于表征 2D 层状材料，并研究应变对低维系统电子特性的影响。
更新日期：2022-08-18
中文翻译：
通过反射各向异性光谱法检测 GaAsBi(001) 表面的次表面应变
反射各向异性光谱 (RAS) 用于研究室温下重建的 GaAsBi(001) 表面。具有 7% Bi 浓度的砷封盖 GaAsBi 样品通过分子束外延 (MBE) 在适当的缓冲层上在几乎匹配的条件下生长，并在超高真空 (UHV) 中退火。低能电子衍射 (LEED) 表明，在 As 脱帽之后，样品在 400 °C 退火后获得 2 × 3/1 × 3 相（富含 Bi），而随后在 450 °C 退火会产生劣化表面秩序。原位测量的 RAS 光谱可以明确地证实，低于 2.5 eV 测量的特征 Bi 相关各向异性没有真正的表面起源，尽管连接到表面：它与存在于表面和表面下的Bi原子之间的定向键的应变有关。这一结果具有双重意义：它建议在某些情况下应重新审视先前对 III-V 族半导体中 RAS 各向异性特征表面的归因；对于未来，它表明 RAS 适用于表征 2D 层状材料，并研究应变对低维系统电子特性的影响。
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