Electronic and transport properties of bilayer heterostructure under light irradiation are of fundamental interest to improve functionality of optoelectronic devices. We theoretically study the modification of transport properties of bilayer graphene and bilayer heterostructures under a time-periodic external light field. The bulk electronic and transport properties are studied in a Landauer-type configuration by using the nonequilibrium Green's function formalism. To illustrate the behavior of the differential conductance of a bilayer contact under light illumination, we consider tight-binding models of bilayer graphene and graphene/hexagonal boron-nitride heterostructures. The nonadiabatic driving induces sidebands of the original band structure and opening of gaps in the quasienergy spectrum. In transport properties, the gap openings are manifested in a suppression of the differential conductance. In addition to suppression, an external light field induces an enhancement of the differential conductance if photoexcited electrons tunnel into or out of a Van Hove singularity.

中文翻译：

---

光照射下垂直异质结构的传输特性

双层异质结构在光照射下的电子和传输特性对于改善光电器件的功能具有重要意义。我们从理论上研究了在时间周期外部光场下双层石墨烯和双层异质结构的传输特性的修改。通过使用非平衡格林函数形式，在 Landauer 型配置中研究了体电子和传输特性。为了说明双层接触在光照下的微分电导行为，我们考虑了双层石墨烯和石墨烯/六方氮化硼异质结构的紧束缚模型。非绝热驱动导致原始能带结构的边带和准能谱中间隙的打开。在交通属性方面，间隙开口表现为对差分电导的抑制。除了抑制之外，如果光激发电子隧道进入或离开范霍夫奇点，则外部光场会引起微分电导的增强。