Molybdenum disulfide (MoS₂), as a representative two-dimensional material, has distinctive physical and mechanical properties, especially in a bilayer form. Here, we conduct a study on the effect of out-of-plane flexoelectricity on a fabricated bilayer MoS₂ Schottky contact via the Conductive Atomic Force Microscope (CAFM). The induced polarization in the sample under the tip force, which is entirely from the flexoelectric mechanism due to the absence of out-of-plane piezoelectricity in terms of the molybdenum-to-sulfur bond symmetry, changes the barrier height of the formed Schottky contact between the bilayer MoS₂ and Au electrode. According to the Hertzian contact theory and the modified current equation of the classical thermionic emission theory, the relationship between the strain gradient and the effective barrier height ${\varphi }_{\mathit{Bp}}$ is quantitatively presented. The out-of-plane flexoelectric coefficients of the bilayer MoS₂ are thus evaluated as $f_{3333}=0.4758$ nC/m and $f_{3113}=f_{3223}=0.2867$ nC/m.

二硫化钼（MoS ₂）作为具有代表性的二维材料，具有独特的物理和机械性能，尤其是在双层形式中。在这里，我们通过导电原子力显微镜 (CAFM) 研究了平面外挠曲电对制造的双层 MoS ₂肖特基接触的影响。在尖端力下样品中的诱导极化完全来自挠曲电机制，因为在钼 - 硫键对称性方面没有面外压电性，改变了形成的肖特基接触的势垒高度双层 MoS _2之间和金电极。根据赫兹接触理论和经典热电子发射理论的修正电流方程，应变梯度与有效势垒高度的关系${\phi }_{\mathit{血压}}$是定量呈现的。因此，双层MoS ₂的面外挠曲电系数被评估为$F_{3333}=0.4758$nC/m 和$F_{3113}=F_{3223}=0.2867$毫微克/米。